| Allicdata Part #: | 497-10704-2-ND |
| Manufacturer Part#: |
STB28NM50N |
| Price: | $ 2.50 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 500V 21A D2PAK |
| More Detail: | N-Channel 500V 21A (Tc) 150W (Tc) Surface Mount D2... |
| DataSheet: |  STB28NM50N Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 2.50000 |
| 10 +: | $ 2.42500 |
| 100 +: | $ 2.37500 |
| 1000 +: | $ 2.32500 |
| 10000 +: | $ 2.25000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1735pF @ 25V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | MDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 158 mOhm @ 10.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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STB28NM50N is a state of the art MOSFET component. It has become the standard part used in power supplies and other power management circuits. This component provides a fast switching speed and low dynamic resistance at an optimal voltage level. In addition, its rugged construction is capable of providing a long life span. Its applications in power supply circuits and power management systems are wide.
Applications
This component has a wide range of applications in the field of power management. It is used in power supplies, printer power supplies, and power transformers. It is also commonly used in switching, rectification, motor and motor starter circuits. Furthermore, it is commonly used in microcontrollers, solar inverters, and many other power management and energy efficiency applications.Working Principle
The basic working principle of the STB28NM50N is an N-channel insulated gate bipolar transistor (IGBT). The IGBT is a three terminal device that comprises of two power semiconductor terminals, the collector and the emitter, and a control terminal, the gate. A gate control signal is applied to the gate terminal, which in turn controls the flow of current from the collector to the emitter. In operation, when a positive voltage is applied to the gate terminal, the transistor is forward biased so that current can flow between the collector and the emitter. As the voltage at the gate terminal increases, the transistor\'s current carrying capability is increased and the transistor\'s output turns on, allowing even more current to flow through the transistor. These transistors come in both voltage and current ratings to meet the requirements of different power management applications. This rating is usually specified on the datasheet of the component as the \'VGS MAX\' value.Conclusion
The STB28NM50N is a state of the art MOSFET component which has a wide range of applications in power management and energy efficiency. Its basic working principle is based on an IGBT which has three terminals, the collector and the emitter, and a gate control terminal. It has a rating specified as the \'VGS MAX\' value and helps provide a fast switching speed and low dynamic resistance at an optimal voltage level.The specific data is subject to PDF, and the above content is for reference
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