STP80N20M5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar Junction Transistors (BJTs) are the most commonly used transistors in electronic circuits. However, Field-Effect Transistors (FETs) also play an important role in many electronic systems. Among the FET types, Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) are widely used in applications that require high switching speeds and low power losses. One such type of MOSFETs is the STP80N20M5.

The STP80N20M5 is a N-channel, enhancement mode MOSFET. It has an average on-state resistance (RDS_on) of 0.045 Ohm and a maximum DC operation voltage (VDS) of 80V. This makes it suitable for applications which require high operation voltages. Furthermore, with a maximum continuous current (ID) of 41A and a maximum pulse current (IDM) of 81A, the STP80N20M5 is well-suited for high current operating applications.

The STP80N20M5 can be used in various application fields such as DC/DC converters, power supplies, motor control stages, high power amplifiers and switching regulators. Furthermore, since it is rated for operation in temperatures up to 175°C, it is suitable for high temperature applications.

The working principle of the STP80N20M5 is based on the MOSFET concept. When VGS is below the threshold voltage Vth, the MOSFET is in the off-state and no current flows through the MOSFET channel. However, when VGS is above Vth, the MOSFET is in the on-state and current flows through the channel.

When the STP80N20M5 is in the on-state, the source-drain current (ID) is determined by the following equation:

ID=k*[(VGS - Vth)^2-VT]*VDS

Where k is the MOSFET transconductance, VT is the MOSFET threshold voltage, VGS is the gate-source voltage and VDS is the drain-source voltage. The STP80N20M5 has a transconductance of 0.50 S/mV2, which is relatively high.

For normal operation of the STP80N20M5, a proper gate voltage must be applied to the gate terminal since this has a significant impact on both the on-state resistance and power dissipation. For example, for an operation voltage (VDS) of 20V, a gate voltage (VGS) of 8V would result in an on-state resistance (RDS_on) of 0.06 Ohm and a power dissipation (PD) of 1.6 W.

The features of the STP80N20M5 make it suitable for a wide range of applications, including high voltage and high current operating applications. Its low RDS_on and high transconductance values ensure high efficiency and low power dissipation. Furthermore, since it is rated for operation at temperatures up to 175°C, it is suitable for high temperature applications.

The specific data is subject to PDF, and the above content is for reference