STP8NM60D

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STP8NM60D is a type of Field Effect Transistor (FET) manufactured by STMicroelectronics and is classified into Single Metal–oxide–semiconductor Field Effect Transistor (MOSFET) for its single transistor configuration. STP8NM60D consists of an N-channel, the Insulated Gate Field Effect Transistor (IGFET), and is designed to perform high speed and power delivery from limited leadframes. It is suitable for use in DC-DC converters due to its cross-conduction protection setting which prevents current conduction in both directions.

The STP8NM60D will provide high current and low switching losses as well as superior dv/dt characteristics. With these features, STP8NM60D can be used in many different applications such as power converters for computers, server applications, telecommunications, lighting, and many more.

Working principle

A metal–oxide–semiconductor field-effect transistor (MOSFET) is a type of field-effect transistor (FET) and works on the principle of electron flow control. The channel of a MOSFET is the path through which electrons flow through the device. This channel is created by applying a bias, or potential difference, across the gate and source terminals. By applying a suitable voltage to the gate terminal, the potential between the gate and source terminals is increased, which results in the creation of electron-rich channel. This process is referred to as \'inversion\' and it causes electrons to flow into the channel, thus increasing the current flowing through the device. By varying the voltage applied to the gate terminal and through proper biasing of the other terminals, the presence of the electron-rich channel can be tailored to suit particular operation purposes.

STP8NM60D is an N-channel MOSFET, meaning that the gate terminal controls the flow of electrons from the source to the drain terminal through an electron-rich channel. In N-channel MOSFETs, the gate voltage is positively biased in order to attract the electrons. Additionally, the source should be grounded for the device to pass current. The on-resistance of an N-channel MOSFET is heavily dependent on the voltage applied to the gate terminal.

The STP8NM60D is an N-channel MOSFET with a popular footprint, and an On-Resistance (R_DS(ON)) of 8 mΩ at 10V. It is available in an FLD-6 package, as well as in a TO-220FP package.

Application fields

STP8NM60D is a high voltage, low on-resistance, and fast-switching MOSFET, and can therefore be used in many application fields requiring fast switching such as DC-DC conversion, motor controllers, robotic arm controllers, and power management applications such as batteries and power supplies. Its fast switching can also benefit applications like automotive lighting, air conditioner controls, and washing machine controls.

In addition, the STP8NM60D can be used in audio amplifiers, motor drives, and other switching power supply applications due to its low R_DS(ON). Its high voltage capacity makes it ideal for use in flyback power supplies and can also be used to replace standard MOSFETs in similar applications.

Moreover, the STP8NM60D can be used to provide maximum power output in high power radio frequency (RF) systems due to its good switching behaviour and low on-resistance, making it suitable for use in high-frequency power management applications as well. It can also be used in distributed and point-of-load power architectures, as well as space-constrained applications such as mobile phones, hand-held devices, and automotive applications.

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