STP8NK85Z

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The STP8NK85Z is a popular type of Insulated Gate Bipolar Transistor (IGBT), which is an advanced power arrangement that combines the advantages of both bipolar and field effect transistor technologies. It is a one-stop shop solution for high current applications due to its wide bandgap, high power density and very low switching losses. The technology is appropriate for applications such as motor drives, power distribution, UPSs, industrial control, rectifiers, solar inverters, and more.

What is a STP8NK85Z?

A STP8NK85Z is a high voltage power semiconductor, designed by ST Microelectronics, which works with a 600V or higher supply voltage. This type of IGBT is highly popular because it offers excellent thermal performance, along with high current ratings, exceptionally low switching losses, and low conduction losses. The IGBT is also available in both reverse conductivity and forward conductivity configurations.

Application Field

The primary application fields for the STP8NK85Z are motor drives (VFDs and PLCs), solar inverters, rectifiers, UPSs, and industrial power distribution. Its unique combination of low switching losses, high power efficiency, and wide band gap make it suitable for a very wide range of industrial applications. The STP8NK85Z IGBT is especially beneficial in applications that require the device to switch under high current load, as its low on-state conduction losses allow it to maintain efficiency even while working at high voltages.

Working Principle

The STP8NK85Z is an Insulated Gate Bipolar Transistor (IGBT), which works differently than a normal transistor. An IGBT consists of three distinct regions: the collector region, the emitter region, and an insulated gate region between the two. The IGBT works when an electric field is applied across the insulated gate. When the gate voltage is high enough, it acts as a current source, and electrons from the source can flow from the collector to the emitter.

As with all semiconductors, the STP8NK85Z has a threshold voltage, which is the minimum voltage required for it to work. When the voltage across the gate reaches the threshold voltage, the IGBT goes into conduction and current can flow through it. The resistance of the IGBT is incredibly low when it is on and can be used to create a conducting path between the two sides of the circuit.

When the current flowing through the IGBT reaches a certain level, it will be turned off, which stops the flow of current through the device. This is an extremely efficient process, as the switching of this type of IGBT is almost instantaneous and requires very little power.

Conclusion

The STP8NK85Z IGBT is a highly efficient and powerful semiconductor device, suitable for a wide range of applications. It offers excellent thermal performance, low switching and conduction losses, and high current ratings, making it ideal for high current applications. The IGBT works through the application of an electric field across its insulated gate region, to create a conducting path between the collector and emitter regions. It also has a threshold voltage, which is the minimum voltage required for it to function, and is turned off when the current flowing through it reaches a certain level.

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