| Allicdata Part #: | 497-7532-5-ND |
| Manufacturer Part#: |
STP85NF55L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 55V 80A TO-220 |
| More Detail: | N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-2... |
| DataSheet: |  STP85NF55L Datasheet/PDF |
| Quantity: | 1975 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4050pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 5V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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STP85NF55L is a vertical double-diffused metal oxide semiconductor field effect transistor (VDMOSFET) produced by STMicroelectronics. It is a N-channel device that provides high-side switching capability with true logic-level drive. STP85NF55L has a maximum on-state resistance of 8.5 ohms and a breakdown voltage rating of 500V.
The STP85NF55L is typically used in flyback circuits, such as in power supplies and SMPS applications, and can also be used for voltage regulation and protection circuits as well as logic level switching applications. This device is designed for high-current, low-voltage applications, and is ideal for pulse power switching and others like H-bridges.
The STP85NF55L has an extremely low on-state resistance, which provides the user with great benefits in both power efficiency and performance. This device also has an exceptionally low gate capacitance, allowing for very fast switching speeds and low gate charge when switching. It also has a low threshold voltage, making it suitable for low-voltage applications.
The STP85NF55L is built using a vertical metal oxide semiconductor process. This process allows for a reduced on-state resistance and improved heat dissipation due to its vertical structure. The device has an integrated gate-source ESD protection. This ensures that the device will remain stable under ESD conditions and will not be damaged due to sudden voltage spikes.
The STP85NF55L has a simple working principle. The electric current passes through the source and drain to the gate terminal of the device. When a gate voltage is applied to the gate terminal, the electric current is blocked. This allows the device to be used as an electronic switch, allowing for on-and-off control of the current.
The STP85NF55L is a versatile and efficient device. It offers excellent performance and low on-state resistance, making it an ideal choice for a variety of applications. Its low gate charge and fast switching speeds make it a great choice for pulse power switching and other high-current, low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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