STP80PF55

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STP80PF55 application field and working principle

The STP80PF55 is a fast, logic level, n-channel, enhancement mode field-effect transistor (FET) with a low gate-to-source threshold voltage and integrated gate charge. This FET is designed for switching and linear applications for a maximum junction temperature of 175°C. Specifically, this transistor can be used for low voltage power switches, battery chargers, DC-DC converters, audio amplifiers, and other high-efficiency, low-noise translinear circuits.

The STP80PF55 is offered in a 8-pin SOIC and a 10-pin PowerPAK MLP package. This FET is constructed using a vertical structure, which enables a higher operating temperature, improved on-resistance, and lower leakage currents compared to traditional surface mount power FETs. The on resistance of the STP80PF55 ranges from 0.11Ω to 0.29Ω and its current rating is up to 90A with a drain source voltage up to 60V. The rated gate source voltage is +/- 20V, with transient current up to 2.5A.

The STP80PF55 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor), which is the most widely used type of transistor in modern circuits. As a single FET, it requires a supply voltage applied to the gate to control the switching action in the device. The way a FET works is primarily through what is known as capacitive coupling. This means that when a certain charge is applied to the gate of the FET, it causes a small electric field to occur between the gate and the drain. This electric field then modulates the current between the drain and source terminals. Since the magnitude of the electric field is dependent on the gate voltage, the gate voltage can be used to modulate the drain-to-source current.

The gate-source voltage of the STP80PF55 is the amount of voltage necessary to create the electric field and cause current to flow between the drain and source terminals. The STP80PF55 has a low gate-to-source threshold voltage (VGS) of 1V, which means that only a small amount of voltage is necessary to create the electric field and turn the FET on. The integrated gate charge of the STP80PF55 prevents the FET from becoming over saturated by large amounts of gate-source voltage.

The STP80PF55 is a great choice for power switches and other power semiconductor applications due to its low on-resistance, high operating temperature, and low gate-to-source threshold voltage. Its features make it ideal for use in high-efficiency, low-noise translinear circuits, such as battery chargers and DC-DC converters. This FET offers high current ratings and low on-resistance, which makes it a great choice for these types of applications.

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