Allicdata Part #: | 497-6743-5-ND |
Manufacturer Part#: |
STP80NF12 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 120V 80A TO-220 |
More Detail: | N-Channel 120V 80A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | STP80NF12 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 189nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 120V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP80NF12 is a semiconductor device made by STMicroelectronics. It is a N-channel enhancement mode power field effect transistor which is based on insulated gate technology. The STP80NF12 is mainly used for applications such as motor control, power management for high power applications, and in AC/DC converters. The device is also suitable for high speed switching, audio amplifiers, and other high power applications.
The STP80NF12 has an on-state resistance of 0.016 Ohms and a drain current of 111 Amperes. It is compatible with standard gate drive circuits, and is capable of withstanding voltage and current surges up to 500V and 16A, respectively. The device has a low gate charge (33 nC), very low input and output capacitances (2.79 pF and 7.77 pF, respectively) and an ESD protection of 2KV.
The STP80NF12 works with an insulated gate that can be turned on and off by an electrical signal. It has two main modes of operation: enhancement mode and depletion mode. In the enhancement mode, it can be turned on by applying a positive voltage on its gate. This causes the positive charge carriers to enter the channel and create a conducting channel between the source and drain. In the depletion mode, it can be turned off by applying a negative voltage on its gate. This causes the negative charge carriers to enter the channel and deplete the channel between the source and drain.
The working principle of the STP80NF12 is based on the principles of operation of MOSFETs. It consists of a drain, source and gate. The transistor works as a voltage-controlled switch; when a voltage is applied to its gate, it affects the current that can flow between its drain and its source. As more voltage is applied, the device turns on, allowing more current to flow between its drain and its source. When the voltage is reduced to zero, the transistor turns off.
The STP80NF12 can be used in a variety of applications. It is used for motor control, power management for high power applications, AC/DC converters and for high speed switching applications. It is also suitable for applications such as audio amplifiers and other high power applications. Because of its low on-state resistance and high current capacity, it can be used to control high-powered and high-voltage loads.
The STP80NF12 is an effective and reliable device which can be used for a variety of applications. Its low gate charge, low input and output capacitances, high current and voltage ratings make it ideal for high power and high voltage applications. With its reliable performance, it is an excellent choice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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