Allicdata Part #: | 497-5396-5-ND |
Manufacturer Part#: |
STP8NM50FP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 550V 8A TO-220FP |
More Detail: | N-Channel 550V 8A (Tc) 25W (Tc) Through Hole TO-22... |
DataSheet: | STP8NM50FP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 415pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP8NM50FP, sometimes referred to as the N-Channel Dual Enhancement Mode Field-Effect Transistor (DEE-FET), is a type of power MOSFET that provides high power density and high efficiency with low input voltages and low gate current. Due to its unique structure, this device is the preferred choice for power management applications such as power supplies, inverters, and switching power converters. This article will discuss the application field and working principle of the STP8NM50FP.
Application Field
The STP8NM50FP is a discrete power MOSFET providing superior power switching performance for various applications in the industrial, consumer, and PC markets. It is particularly well-suited for power management applications such as personal computer power supplies, AC-DC and DC-DC DC/DC converters, power supply rail regulators, battery chargers, motor drives and AC motor controllers, and LED lighting. The MOSFETs offer an efficient, cost-effective, and easy-to-implement solution for powering products and devices.
The STP8NM50FP is specifically designed for power switching applications. Its special design offers high peak and continuous (dc rating) current capability, and low the on-state resistance (RDS(on)) resulting in superior power device efficiency and power density performance.
The STP8NM50FP is available in a wide range of packages, offering customers the flexibility to select their preferred package depending on the application. Packages include a through-hole version 8-pin (0.8mm field-effect transistors (FETs) package), a surface-mount version 8-pin (0.6mm field-effect transistors (FETs) package) and a surface-mount version 12-pin (micro lead frame (MLF)).
Working Principle
The working principle of the STP8NM50FP MOSFET is relatively simple. The device operates in enhancement mode, where its source is connected to the drain directly and its gate is connected to its source through an N-channel. When the gate voltage is lower than the source voltage then the MOSFET is blocked. But when the gate voltage is increased, electrons gain enough energy to pass through the channel and the MOSFET turns on.
The current flows from drain to source and the voltage across the P-channel enhances the current. As a result, the current stalls and the device acts as an on-off switch. The STP8NM50FP features a maximum current rating of 8A and a maximum voltage rating of 500V. This allows the device to handle higher voltages and currents than other types of N-channel MOSFETs.
Conclusion
The STP8NM50FP is a discrete N-Channel DEE-FET perfect for power management applications. This device offers high power density and high efficiency while running on low input voltages and low gate current. The device is well-suited for use in personal computer power supplies, AC/DC DC/DC converters, power supply rail regulators, battery chargers, motor drives and AC motor controllers, and LED lighting. The STP8NM50FP is designed to operate in enhancement mode, allowing the gate to be connected directly to the source. This allows the device to function as an on-off switch, allowing it to handle higher currents and voltages than other power MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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