| Allicdata Part #: | STP8NS25FP-ND |
| Manufacturer Part#: |
STP8NS25FP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 250V 8A TO-220FP |
| More Detail: | N-Channel 250V 8A (Tc) 30W (Tc) Through Hole TO-22... |
| DataSheet: |  STP8NS25FP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 51.8nC @ 10V |
| Series: | MESH OVERLAY™ |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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In order to understand the working principle of the STP8NS25FP, it is important to know how MOSFETs work in general. A MOSFET is an insulated-gate field-effect transistor (IGFET) which consists of a semiconductor material with a source, a drain, and a gate terminal. The source and drain are made up of an n-type semiconductor material, which acts as a conductor for current when the gate is positively charged, and also functions as an insulator when the gate voltage is zero. The gate terminal is made up of a p-type semiconductor material which eliminates the interface between the drain and the source. When voltage is applied to the Gate terminal, it causes a \'gate effect\' whereby the voltage creates an electric field which influences the current flow between the drain and the source. This is due to the way the electrons interact with the electric field. When the gate effect is present, a channel is formed by the electrons which allows the current to flow between the source and the drain. This channel is also called the "Inversion Layer" because the voltage applied to the gate turns the channel into a conductor. The STP8NS25FP has a number of advantages over traditional transistors. For example, the STP8NS25FP has a greater efficiency compared to other transistors due to its lower power consumption. It also offers improved switching characteristics due to its high peak current capabilities and low on-state resistance. Additionally, the STP8NS25FP has a higher temperature rating than other MOSFETs, allowing it to operate in higher temperatures without sacrificing its performance. The STP8NS25FP is also a cost effective alternative to other transistor technologies. Its low price and small size make it a popular choice for high voltage applications in the automotive and industrial sectors.In conclusion, the STP8NS25FP is a powerful and cost-effective solution to a wide range of applications. Its low on-state resistance, high peak current capabilities, and high temperature rating make it ideal for high frequency and high current applications. It is well suited for both digital signal processors and automotive power management circuits.
The specific data is subject to PDF, and the above content is for reference
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