Allicdata Part #: | 497-5021-5-ND |
Manufacturer Part#: |
STP8NK100Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1000V 6.5A TO-220 |
More Detail: | N-Channel 1000V 6.5A (Tc) 160W (Tc) Through Hole T... |
DataSheet: | STP8NK100Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2180pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 102nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 1.85 Ohm @ 3.15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP8NK100Z is a power MOSFET, based on the STMicroelectronics STripFET technology, which utilizes a combination of DMOS transistors and an advanced and patented high voltage technology to offer superior power device performance.
This power MOSFET is a high voltage and high power MOSFET that is capable of rated currents of up to 100 A and voltages of up to 500 V. It features a high energy efficiency and high reliability, and can be used in a variety of power management and distribution systems, including those for automotive, industrial, and consumer applications.
Application Field
The STP8NK100Z is particularly suitable for motor control, power conversion, and power management. It can be used in power supply applications such as rectifier, bridge, and DC/DC converter circuits.
The STP8NK100Z power MOSFET is also well-suited for applications with high power efficiency requirements, such as lighting, power amplifiers, and audio equipment.
Working Principle
The STP8NK100Z works as a voltage-controlled switch. When the gate-source voltage exceeds the threshold voltage, the device is turned on and the current flow is enabled.
The STP8NK100Z allows high current densities to flow through the device, which enables its use in high power applications. The device also features a low on-state resistance and an extremely low input capacitance, which allows for higher switching speeds.
The STP8NK100Z features an integrated body-diode which allows the device to serve as a bidirectional switch, allowing energy to flow in either direction. This also allows the device to act as a DC-to-DC converter, i.e. inverting energy from a high voltage source to a low voltage destination.
The STP8NK100Z also features a fast switching speed, allowing for optimal power management in high speed applications. It can also be used in combination with the STMicroelectronics PowerTrench technology, enabling the device to be used in power applications needing very fast switching speeds and low power losses.
The STP8NK100Z provides superior power device performance, making it an ideal choice for applications needing high current densities, fast switching speeds, low power losses, and low cost.
The specific data is subject to PDF, and the above content is for reference
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