Allicdata Part #: | STP8NS25-ND |
Manufacturer Part#: |
STP8NS25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 250V 8A TO-220 |
More Detail: | N-Channel 250V 8A (Tc) 80W (Tc) Through Hole TO-22... |
DataSheet: | STP8NS25 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51.8nC @ 10V |
Series: | MESH OVERLAY™ |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Single Power MOSFETs (STP8NS25) are widely used as power switches in power electronics applications due to their high current carrying capability and low on-state resistance. They are also used for stepping motor control, LED lighting, DC/DC converters, switching regulators, and many other applications.
STP8NS25 is a 30V N-Channel MOSFET which is capable of power switches up to 25A. It comes in a PQFN-6 package and is easy to mount on any standard board due to its small size. The STP8NS25 is pin-compatible with the STP8N25. The STP8NS25 provides a cost-effective solution for mid-power applications.
The working principle of STP8NS25 is based on the physical behaviour of electrons in a semiconductor material. When a voltage is applied, electrons are forced to move through the semiconductor material, creating an electric field. This electric field creates a path for current to flow. The MOSFET’s structure is designed to allow the electric field to vary the resistance of the path, controlling the amount of current flowing through the MOSFET. The gate terminal is used to control the resistance of the MOSFET circuit, thus controlling the voltage and current flowing through the device. When the gate voltage is low, the resistance of the path is high, thus limiting the current flowing through the device. When the gate voltage is sufficiently high, the resistance of the path is low, allowing maximum current flow through the device.
The STP8NS25 is a high current N-channel MOSFET which offers low on-state resistance and maximum power-handling capabilities. Its low gate threshold voltage allows it to be used in a variety of circuits, such as motor control, LED lighting and DC/DC converters. The device also has an RDS(on) which is very low and is ideal for applications requiring low power dissipation. It is also easily configured with other components and is ideal for step-down converters and high-efficiency DC/DC converting circuits.
The STP8NS25 is an ideal device for use in power electronic applications, providing an efficient and cost-effective solution for switching and power handling needs. It is designed for flexibility and ease of use, allowing for high current switching with low on-state resistance and minimal power loss. The device is available in different packages and offers many advantages, such as low gate thresholds, low RDS(on) and ease of configuration with other components. This makes it an ideal solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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