STP80NF55L-06 Allicdata Electronics
Allicdata Part #:

497-5898-5-ND

Manufacturer Part#:

STP80NF55L-06

Price: $ 2.52
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 55V 80A TO-220
More Detail: N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-2...
DataSheet: STP80NF55L-06 datasheetSTP80NF55L-06 Datasheet/PDF
Quantity: 914
1 +: $ 2.52000
10 +: $ 2.44440
100 +: $ 2.39400
1000 +: $ 2.34360
10000 +: $ 2.26800
Stock 914Can Ship Immediately
$ 2.52
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 5V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP80NF55L-06 is a N-channel MOSFET device, often found in low voltage, high current applications. It is a high-density power MOSFET, capable of handling 80A continuous drain current and voltages up to 55V. The STP80NF55L-06 includes built-in protection against over-temperature and overcurrent to ensure safe operations and system reliability. It features a low total gate charge and a low input capacitance, making it ideal for high frequency switching applications.

The STP80NF55L-06 belongs to a type of semiconductor device known as a Field Effect Transistor (FET). FETs are transistors that are controlled by an electric field, as opposed to a conventional transistor which is controlled by a current. FETs can amplify, switch, or filter electrical signals using their source-drain electric field. The STP80NF55L-06 is an N-channel FET, which means that the source and drain electrodes are separated by an N-type material. N-channel FETs can conduct current in either direction, allowing them to be used in a range of applications.

The STP80NF55L-06 is commonly used as a switch component in power applications. Its high current handling capability, combined with its low resistance, makes it suitable for switching higher power loads. It can also be used in various low-noise applications, such as for audio or video amplifiers. The STP80NF55L-06 is also ideal for use as a voltage regulator, as it can be used to regulate the output voltage of an AC power supply.

The working principle of the STP80NF55L-06 is similar to that of a conventional transistor. When a voltage is applied to the gate terminal, a channel is formed between the source and drain terminals. This channel allows the flow of electrons to occur, which controls the current flow between the terminals. When the voltage applied to the gate terminal is increased, the channel widens, allowing more current to flow between the source and drain terminals. By controlling the applied gate voltage, the amount of current flowing through the device can be regulated.

The STP80NF55L-06 is suitable for a wide range of applications, from consumer electronics to automotive and military applications. Its high current and voltage handling capacity, in combination with its low resistance, make it the ideal choice for high voltage and high power switching applications, and for low noise audio or video amplifiers. Its low total gate charge and low input capacitance also make it well-suited for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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