Allicdata Part #: | STP80N70F4-ND |
Manufacturer Part#: |
STP80N70F4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | POWER MOSFET N-CHANNEL TO-220 |
More Detail: | N-Channel 68V 85A (Tc) 150W (Tc) Through Hole TO-2... |
DataSheet: | STP80N70F4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5600pF @ 25V |
Vgs (Max): | ±20V |
Series: | DeepGATE™, STripFET™ |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 9.8 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drain to Source Voltage (Vdss): | 68V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
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The STP80N70F4 is a N-Channel MOSFET transistor with 800V, 70A and 4.6mΩ ratings. This device is designed for use in various applications, such as switched applications, audio amplifiers, and motor control. The device is capable of high-speed switching, making it suitable for applications such as computers and consumer electronic devices. This MOSFET is suitable for both low and high-voltage applications.The STP80N70F4 offers a number of features that make it an attractive choice for a variety of applications. It features a low gate threshold voltage of 2.4V, making it suitable for low-voltage applications. The device also has low input/output capacitance and offers a fast switching speed and low on-resistance. Additionally, the device is capable of handling 70A at a drain-source voltage of 800V. Furthermore, the device has a high-stability FOM of 4.2mΩ.The STP80N70F4 is constructed with a silicon substrate and features a N-Channel MOSFET (metal-oxide-semiconductor field-effect transistors) structure. The device has a built-in gate protection diode and a drain-source series resistance of 4.6mΩ. The device also features a gate-source capacitance of 17pF, an avalanche current rating of 10A, and a maximum operating temperature of 150°C.The device works on the general principle of MOSFETS. The operation of MOSFETS is based on the MOS capacitor. A MOS capacitor is a structure consisting of a gate insulated from its source and drain by an oxide layer. This gate acts as a capacitor, which can be charged or discharged by an external signal, changing the current flow between the source and drain. The gate can be thought of as a switch, allowing current to flow when it is charged and stopping current when it is discharged.When the gate of the MOSFET is charged, a high electric field is created across the device. This electric field attracts electrons from the source to the drain, allowing current to flow. When the gate is discharged, the electric field is reduced and the current flow between the source and drain is stopped.The STP80N70F4 is a reliable device and can be used in a wide range of applications. It is well-suited for power management applications, switch-mode power supplies, high-voltage applications, and motor control applications. It is also ideal for audio amplifiers, linear power supplies, and laptop computers. The device is also suitable for a variety of low-voltage applications, such as LED lighting and low-power audio amplifiers.Overall, the STP80N70F4 is an excellent choice for a variety of applications. The device offers high voltage and current ratings along with a low on-resistance, making it suitable for both high and low-voltage applications. The device is also easy to use and is well-suited for use in switch-mode power supplies, audio amplifiers, and motors.
The specific data is subject to PDF, and the above content is for reference
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