Allicdata Part #: | 497-17084-ND |
Manufacturer Part#: |
STP8N90K5 |
Price: | $ 2.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 900 V, 0.60 OHM TYP., |
More Detail: | N-Channel 900V 8A (Tc) 130W (Tc) Through Hole TO-2... |
DataSheet: | STP8N90K5 Datasheet/PDF |
Quantity: | 180 |
1 +: | $ 2.14200 |
50 +: | $ 1.72973 |
100 +: | $ 1.55679 |
500 +: | $ 1.21082 |
1000 +: | $ 1.00325 |
Rds On (Max) @ Id, Vgs: | -- |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±30V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Series: | MDmesh™ K5 |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP8N90K5 is a type of transistor, or more specifically a field effect transistor (FET). It is a Single MOSFET (Metal Oxide Semiconductor FET) which means it is a type of transistor that uses the field effect to control current flow in the transistor’s channel. The transistor’s structure consists of source and drain terminals and the channel between them which is known as the gate. The STP8N90K5 FET has three terminals: the source, drain and gate.
STP8N90K5 transistors find applications in a range of digital and analog circuits. Commonly, it is used for switching applications as its fast switching speed, low threshold voltage and low leakage current makes it an ideal choice for use in digital and analog circuits with high switching speeds and noise immunity. It is also used in audio amplifiers, signal mixers, signal preamplifiers and voltage regulators.
The operation of the STP8N90K5 begins with the gate terminal. By applying a voltage across the gate, the voltage travels through the gate oxide layer and down to the conduction channel. This voltage repels the electrons which causes a depletion zone to form, long enough to cut-off the majority of the current flow. This is the primary benefit of an FET, since the depletion layer can be adjusted according to the applied voltage, the transistor can easily be switched on and off depending on the input signal at the gate.
The STP8N90K5 also has the benefit of low threshold voltage, a typical voltage range of 3 - 8 volts. The threshold voltage is the amount of voltage needed to be applied to the gate for the FET to become saturated, that is, for the current to start flowing from source to drain. The low threshold voltage is ideal for use in circuits which require low voltage operations, such as CMOS logic circuits.
The STP8N90K5 also has great power handling capabilities and low on resistance values. This is beneficial for circuits which require high current operation, such as motor controllers, dc-dc converters and power amplifiers. The low on resistance values means that the FET can handle high current loads with minimal power losses and therefore is an ideal choice for use in applications that require maximum efficiency.
The STP8N90K5 is also a good choice for high frequency applications due to its fast switching speed. The transistor has a maximum transition frequency of around 2.5GHz, making it ideal for high speed digital gates and analog circuits. This makes the FET great for use in high frequency communication systems and multi-gigabyte data transfer systems.
In conclusion, the STP8N90K5 is a great choice for a wide range of applications. Its fast switching speed, low threshold voltage and low on resistance values make it a great choice for switching applications, while its power handling capabilities and high frequency capabilities make it great for high power and high frequency applications. The STP8N90K5 is a versatile and powerful FET which can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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