Allicdata Part #: | 497-8793-5-ND |
Manufacturer Part#: |
STP8NM60ND |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 7A TO-220 |
More Detail: | N-Channel 600V 7A (Tc) 70W (Tc) Through Hole TO-22... |
DataSheet: | STP8NM60ND Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STP8NM60ND is an Insulated Gate Bipolar Transistor (IGBT) module designed for high frequency switching applications. It is a high-power, low-distortion, high-current semiconductor device. The STP8NM60ND module is one of a range of IGBTs from STMicroelectronics designed for power conversion, DC-DC and AC-DC motor control, UPSs, general inverter system, uninterruptible power supplies, lighting, digital power supplies and variable speed drives. With these applications, the STP8NM60ND can provide enhanced performance with low power loss, high temperature operation, low voltage requirements and high operating frequency.
The STP8NM60ND is powered by a single phase, 4-pin power distribution module. It consists of two power devices, an IGBT of STP8NM60ND type and an MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) of UIP3068P8 type. The IGBT is the one responsible for fast switching applications and the MOSFET does the low-momentum control. This is due to their two different characteristics. The IGBT works as a power switch, and its structure integrates the characteristics of both a metal–oxide–semiconductor (MOS) and a bipolar transistor, so it offers fast switching and low-momentum control. It is a high-powered semiconductor with a low saturation current, low-on-state voltage drop, and a low-voltage clamping capability.
The MOSFET is an electronic component that consists of a metal gate placed between a semiconductor and an insulator material, and is capable of high-frequency switching. It also provides low-momentum control, making it suitable for low-momentum applications like controlling motor speed. The UIP3068P8 MOSFET features a low on-state resistance, high breakdown voltage, high heat dissipation, and low gate charge.
The STP8NM60ND module is used in motor drives due to its low-loss and fast switching characteristics, making it suitable for controlling motor speed and torque. It is also used in power conversion systems such as DC-DC and AC-DC converters. It can handle high power input and output, allowing it to be used in applications such as digital power supplies, UPS systems, and variable-speed drives. Its high-frequency operation allows it to be used in high-speed switching applications.
In short, the STP8NM60ND is an ideal device for high-speed switching, high-power conversion, low-power loss, and high temperature applications. Its combination of the IGBT and MOSFET make it a versatile and reliable device, providing enhanced performance and reliability. Its low-voltage clamp and low saturation current ensure low power loss and a high operating frequency. The STP8NM60ND is an ideal device for motor drive and various power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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