STP80NF10FP

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4300pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	189nC @ 10V
Series:	STripFET™ II
Rds On (Max) @ Id, Vgs:	15 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	38A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STP80NF10FP is a type of insulated gate-bipolar transistor (IGBT) which is a kind of power semiconductor device that combines the attributes of both a MOSFET and a bipolar transistor into one packaged device. This transistor offers low gate-source voltage (VGS), low threshold voltage (VTH), low gate capacitance (CGS) and low on-resistance (RDS). With these features, STP80NF10FP devices are useful for various types of applications, including battery charging systems, motor drives, motion control, lighting and power supplies.The STP80NF10FP is a three-terminal device consisting of a source, a drain and a gate. The source represents the drain of an enhancement-mode n-channel power MOSFET and the drain is the collector of a vertical PNP lateral BJT. The gate of the transistor is accessible for control, allowing it to function as an electrically controlled switch.The STP80NF10FP is used in applications where the load current is setup using the external supply voltage. The built-in N-channel MOSFETs turn on by applying a positive voltage to the gate and will turn off as soon as the gate voltage falls below its threshold voltage (VTH). The input gate current of the transistor is minimized, further reducing power losses, due to the use of low gate capacitance (CGS). The device can also handle high switching frequency, up to 500 kHz, due to its low gate charge (QGD).In terms of features and performance, the STP80NF10FP provides its users with high current gain, low dropout voltage and short response time. The on-state resistance of the device is low as well, so its switching losses are minimized even in high frequency operation. The majority carrier storage time of the device is very short, allowing it to achieve high switching speeds with minimal power dissipation. Furthermore, the fact that the power losses of the device depend mostly on the switching frequency, rather than the load current, makes it suitable for motor control applications.Furthermore, the STP80NF10FP has low noise levels and its protection circuits are quite effective against over-current and temperature shifts. In addition, it operates over a wide temperature range, from -55°C to 125°C, which makes it suitable for a variety of applications.All in all, the STP80NF10FP is a versatile and robust power semiconductor device with numerous advantages and features, making it the ideal choice for a wide variety of applications, ranging from battery charging systems to motor drives, lighting and power supplies.

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