STP80N70F6

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The STP80N70F6 is a three-terminal N-channel MOSFET that is commonly used in power switching applications. It is a vertical-channel device with a low on-state drain-source resistance and ultra-high speed switching performance. The device features a maximum drain current rating of 80A and a drain-source voltage rating of 700V. The STP80N70F6 is an insulation-type MOSFET that is ideal for high-current, high-frequency, and high-efficiency applications.

Application Field

The STP80N70F6 is often used in a variety of switching applications, particularly those requiring high-current switching and high switching speeds. Common applications include DC/DC converters, high-power motor control, and DC/hard switching. The STP80N70F6 is also often used in power inverters, battery chargers, and motor control circuits.

Principle of Operation

The STP80N70F6 is a three-terminal N-channel MOSFET that operates on the principle of channel enhancement. The channel is formed between the drain and the source of the device, and the gate terminal controls the current flow through the channel. When a positive voltage is applied to the gate, the channel is turned “on”, allowing current to flow from the drain to the source. As the gate voltage increases, the channel conducts more current through the device. Conversely, when the gate voltage is reduced, the channel is turned “off”, blocking current flow from the drain to the source.

The STP80N70F6 has a low on-state drain-source resistance, which makes it ideal for high-current applications. The device also features a low gate-drain capacitance, enabling it to operate at high switching speeds. The device is designed for low power consumption and low thermal resistance. The STP80N70F6 can be used for both unidirectional and bidirectional switching.

Device Construction

The STP80N70F6 is constructed in a vertical-channel MOSFET technology. The device features a gallium arsenide substrate and a silicon drain-source layer. The drain and source terminals are connected to the substrate, while the gate is connected to the source terminal via a contact layer. The source terminal also has a contact layer connected to the gate to reduce the gate-drain capacitance and improve the device switching performance.

Packaging and Recommendations

The STP80N70F6 is available in a TO-220 package containing three pins. The device is designed to be mounted on a heatsink to dissipate the heat generated during operation. It is also recommended to use a short overall wiring length for the device to ensure improved reliability. The device should be used with appropriate bypass capacitors to reduce the switching losses and ensure proper operation.

Conclusion

The STP80N70F6 is a three-terminal N-channel MOSFET commonly used in power switching applications. It is a vertical-channel device with a low on-state drain-source resistance and ultra-high speed switching performance. The device is available in a TO-220 package containing three pins and is designed to be mounted on a heatsink for proper operation. Appropriate bypass capacitors should also be used to reduce switching losses. The STP80N70F6 is an ideal device for high-current, high-frequency, and high-efficiency applications.

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