STP80NE03L-06

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STP80NE03L-06 is a brand new Power MOSFET produced by STMicroelectronics. It is a single-N channel logic level MOSFET with a drain current up to 80A and well-balanced sizes. This excellent device has a maximum off-state drain-source resistance of only 2.7mΩ.

The STP80NE03L-06 has a wide range of applications in a variety of automotive, industrial and consumer products, and is especially suitable for battery powered devices that operate in the low-voltage domain.

This MOSFET is a great choice for cost- and space-saving applications due to its sub-micron size, making it ideal for various low-power designs such as inverters, HVAC systems, motor drives, welding machines and solar energy systems.

STP80NE03L-06’s working principle is fairly simple. When the gate voltage, VGS, is below a certain threshold voltage, the MOSFET is in the \'off-state\' and the device is non-conducting. When VGS is above the threshold voltage, the device is in the \'on-state\' and will conduct current from Drain to Source.

This device features a maximum drain-source breakdown voltage (BVDSS) of 60V, and a maximum gate to source voltage of 20V. The maximum drain-source on-state conductivity is 0.033 Ω-1 see.

It is a rugged, low-cost device that can handle high supply voltages, and it has high surge handling capability, making it highly reliable in the most demanding applications.

The STP80NE03L-06 is a cost-effective, space-saving solution and supports both drain current and Pulsed Drain Current ratings. It can be used in both switch-mode power applications and linear power applications, making it extremely versatile for both industrial and consumer applications.

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