Allicdata Part #: | 497-5397-5-ND |
Manufacturer Part#: |
STP8NM60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 8A TO-220 |
More Detail: | N-Channel 650V 8A (Tc) 100W (Tc) Through Hole TO-2... |
DataSheet: | STP8NM60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP8NM60 is a greatly efficient N-channel MOSFET produced by ST Microelectronics. It is one of the most preferred MOSFET components, With its high drain current capability, low on-state resistance, and a wide voltage range, it is suitable for many applications. This article explains the application fields and working principle of the STP8NM60.
Application fields of STP8NM60
The STP8NM60 offers reliable operation in an array of applications. It\'s mainly used in home and office appliances, lighting control systems, power supplies, motor control, switch mode power supply, and many other industrial and consumer appliances. With itslow on-state resistance, it is also ideal for low-side switch up to 600V in lighting applications.
Moreover, STP8NM60 can easily be used as a high power switch for battery operated portable equipment, such as lamps and portable electric devices. Its high drain current and low on-state resistance make it ideal for portable equipment.
Furthermore, this MOSFET can be used in high frequency resonant applications, due to its high slide frequency and low output capacitance. It is also suitable for many switching process applications in PC and telecom applications.
Working Principle of STP8NM60
The STP8NM60 is an N-channel enhancement-mode MOSFET, which is capable of working in low operating voltages. It has a P-region substrate that is connected to the drain terminal and is insulated from the gate and the source terminal by a thin layer of silicon dioxide. In case of a positive voltage applied to the gate, the electric field will attract electrons in the P-region, resulting in the presence of an inversion layer. This inversion layer is made up of electrons and acts as a conduction channel between the source and the drain terminal.
When a current is applied to the gate, it will reduce the resistance of the gate-channel junction, allowing more current to flow from the gate to the source—and then eventually to the drain. As a result of this, a current will flow through the conduction channel and the resistance will become even lower. This process is known as enhancement-mode of operation, and is why the STP8NM60 is considered to be an efficient and powerful MOSFET.
Conclusion
The STP8NM60 is a highly efficient N-channel MOSFET that is popularly used in many types of applications. It offers a wide voltage range, low on-state resistance, and high drain current capability, making it an ideal component for many applications. This article has explained the application fields and working principle of the STP8NM60 in detail.
The specific data is subject to PDF, and the above content is for reference
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