STP8NM60N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STP8NM60N is an N-channel enhancement type field effect transistor (FET) with online tracking gate drive. It is designed for low gate charge, allowing easy switching on high voltage applications. The electrical characteristics of the device enable it to operate efficiently in a wide range of applications, including power devices, such as switching circuits, circuit protection, current sensing and energy storage.

Application Field

STP8NM60N is mainly utilized as a power supply switch, a PCU, UPS, and a motor driver, which requires low on-resistance and high switching frequency in the high voltage range. It is also used in boost voltage controllers, switching power supplies, lighting systems, LCD display panel controllers, etc.

Working Principle

The STP8NM60N is a voltage-controlled device, meaning that it allows the current flow between the source and the drain terminals to be restricted by applying a voltage to the gate terminal. The voltage between the drain and the source terminals is a function of the voltage applied to the gate. The operating principle of the STP8NM60N is similar to that of a normally-on (N-channel) semiconductor switch. When a voltage is applied to the gate terminal, electrons from the N-channel are attracted to the gate and the switch is turned on. When the voltage is removed, the electrons are drawn away from the gate and the switch is turned off. The on-resistance of the STP8NM60N can be affected by the temperature and the applied voltage. Therefore, it is important to select a device that is suitable for the required characteristics and specified operating conditions.

The STP8NM60N is designed to have a low gate charge, allowing easy switching in high voltage applications. The electrical characteristics of the device enable it to operate efficiently in a wide range of applications, including power devices, such as switching circuits, circuit protection, current sensing and energy storage. To further reduce power losses, the device can be used with a low on-resistance design, allowing a higher efficiency solution.

To minimize the loss during switching, it is important to minimize the switching time of the STP8NM60N. The device features a low gate charge, allowing fast switching, thus, enabling faster system response. Additionally, the large capacitance of the gate allows the device to absorb large input voltages and current spikes, further minimising switching time.

To improve the reliability of the STP8NM60N, the device is housed in a Leadless Package (LLP), which provides higher creepage distance with less dissipation. LLP increases the dielectric insulation between the gate, source and drain terminals, thus, minimising switching losses and improving system stability.

The STP8NM60N is a versatile device, which is suitable for a wide range of applications, thanks to its low gate charge, efficient switching and LLP housing. As a result, the device can be used in power devices, such as switching circuits, circuit protection, current sensing and energy storage. Furthermore, the device is widely used in boost voltage controllers, switching power supplies, lighting systems, LCD display panel controllers, etc.

The specific data is subject to PDF, and the above content is for reference