STP8NM50

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	415pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	800 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	550V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP8NM50 is a N-channel power MOSFET that has been designed to provide a higher level of performance than other MOSFETs. It is a single device that has an area of 800V STP8NM50s in which the drain current can be increased up to 8A. It is a low-drain gate to source voltage that can withstand up to 13V, making it suitable for a wide range of applications.The STP8NM50 is a general purpose MOSFET, which means it can be used for switch-mode power supplies, DC/DC converters, low-noise amplifiers, color bar generators, and so on. It can also be used for PWM motor control circuits, brushless motor control circuits, dimmer controllers, and industrial temperature control circuits. Additionally, it can be used for low-noise pre-amps, RF amplifiers and clock driver circuits.The STP8NM50 is designed with a low-RDS(on) to lower power losses and increase efficiency when compared to other MOSFETs. The power dissipation can be reduced by 10%. The STP8NM50 is also capable of operating at very high frequencies up to 3.6GHz, making it suitable for high-speed applications.The STP8NM50 works by operating on the principle of the enhanced MOSFET (eMOSFET). This type of MOSFET has an increased gate-to-source area, which reduces the on-state resistance. This increases the drain current and increases the device’s switch-on speed. It also uses a high-voltage gate to reduce the gate threshold voltage, allowing it to handle higher drain voltages.The STP8NM50 has been designed to be used in all kinds of circuit designs and has a wide selection of features, such as being able to operate in the temperature range of -40°C to 125°C. It has an operating frequency range from 300kHz to 3.6GHz and operates at a drain-to-source breakdown voltage of 800V. It also has a very low gate-source capacitance and a low gate-threshold voltage, making it suited for applications such as frequency-shift keying circuits, driving circuits, and motor control systems.The STP8NM50 is a great device for getting the most out of a circuit design. Its low-drain gate to source voltage and low gate-threshold make it capable of operating in high-frequency circuit designs as well as providing more efficient solutions to existing circuit applications. Additionally, its temperature range of -40°C to 125°C make it compatible with different environments.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description