Cap alum 220uf 20% 80v thru hole - Allicdata Electronics

Related Categories

1 2 3 4 5 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SUP53P06-20-E3- ND	SUP53P06-20-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.2A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	4990 Order	--
SUP53P06-20-GE3 -ND	SUP53P06-20-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.2A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
SPD30N03S2L20IN TR-ND	SPD30N03S2L-20	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2V @ 23A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
STP130N8F7-ND	STP130N8F7	STMicroelectronics	View more Series: STripFET F7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Power Dissipation (Max): 205W (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1000+: $0.6702
FQPF44N08T-ND	FQPF44N08T	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Power Dissipation (Max): 41W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
FQAF44N08-ND	FQAF44N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 35.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 17.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	1000 Order	1+: $0
1727-6502-ND	PSMN3R3-80ES,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9961pF @ 40V Power Dissipation (Max): 338W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1000+: $1.2127
FQP70N08-ND	FQP70N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Power Dissipation (Max): 155W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	--
FQP9N08L-ND	FQP9N08L	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
VP0808B-2-ND	VP0808B-2	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 6.25W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	1000 Order	1+: $0
1727-4265-ND	PSMN4R4-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 40V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2329 Order	1+: $2.1105 50+: $1.7038 100+: $1.5334 500+: $1.1927 1000+: $0.9882
497-14227-5-ND	STF140N8F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 40V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	1000+: $1.3247
1727-4263-ND	PSMN5R0-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6793pF @ 12V Power Dissipation (Max): 270W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1235 Order	1+: $1.26 50+: $1.0152 100+: $0.9137 500+: $0.7106 1000+: $0.5888
1727-5285-ND	PSMN4R3-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8161pF @ 40V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2650 Order	1+: $2.0538 50+: $1.6556 100+: $1.4901 500+: $1.159 1000+: $0.9603
IXFH80N08-ND	IXFH80N08	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	1000 Order	1+: $0
FQPF9N08-ND	FQPF9N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Power Dissipation (Max): 23W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
VP0808B-E3-ND	VP0808B-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 6.25W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	1000 Order	1+: $0
FDP053N08B-F102 -ND	FDP053N08B-F102	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 40V Power Dissipation (Max): 146W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	171 Order	1+: $1.3167 10+: $1.1901 100+: $0.9561 800+: $0.6714 1600+: $0.6161
SUP60030E-GE3-N D	SUP60030E-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	3000+: $1.06
FQP44N08-ND	FQP44N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Power Dissipation (Max): 127W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
497-15553-5-ND	STP100N8F6	STMicroelectronics	View more Series: STripFET F6 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5955pF @ 25V Power Dissipation (Max): 176W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	399 Order	--
FDP86363-F085-N D	FDP86363-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 40V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	192 Order	1+: $2.3058 10+: $2.0595 400+: $1.5238 800+: $1.2355 1200+: $1.1532
TK46E08N1S1X-ND	TK46E08N1,S1X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4V @ 500A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V Power Dissipation (Max): 103W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1+: $0
1727-5280-ND	PSMN4R3-80ES,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8161pF @ 40V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	495 Order	1+: $2.1861 50+: $1.7621 100+: $1.586
HUF75545P3-ND	HUF75545P3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Power Dissipation (Max): 270W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	113 Order	--
497-16019-5-ND	STP110N8F6	STMicroelectronics	View more Series: STripFET F6 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 40V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1374 Order	--
497-2787-5-ND	STP50NE08	STMicroelectronics	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
FQPF44N08-ND	FQPF44N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Power Dissipation (Max): 41W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
FQA44N08-ND	FQA44N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 49.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 24.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Power Dissipation (Max): 163W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	--
VP0808B-ND	VP0808B	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 6.25W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	1000 Order	1+: $0
296-37287-5-ND	CSD19505KCS	Texas Instruments	View more Series: NexFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 150A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 100A, 6V Vgs(th) (Max) @ Id: 3.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1444 Order	--
FQA90N08-ND	FQA90N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	295 Order	--
1727-5896-ND	PSMN6R5-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4461pF @ 40V Power Dissipation (Max): 210W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	3893 Order	1+: $1.2474 50+: $1.0054 100+: $0.9048 500+: $0.7038 1000+: $0.5831
HUF75542P3-ND	HUF75542P3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	413 Order	--
1727-4270-ND	PSMN012-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2782pF @ 12V Power Dissipation (Max): 148W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	5000+: $0.3739
1727-5282-ND	PSMN3R5-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9961pF @ 40V Power Dissipation (Max): 338W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	3114 Order	1+: $1.7955 50+: $1.449 100+: $1.3041 500+: $1.0143 1000+: $0.8404
497-16486-5-ND	STP110N8F7	STMicroelectronics	View more Series: STripFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3435pF @ 40V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	986 Order	--
497-13654-5-ND	STP270N8F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V Power Dissipation (Max): 315W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	23 Order	1+: $5.1597 50+: $4.2328 100+: $3.8199 500+: $3.2005 1000+: $2.7875
FDP039N08B-F102 -ND	FDP039N08B-F102	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9450pF @ 40V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	763 Order	1+: $3.2445 10+: $2.898 100+: $2.3764 800+: $1.7388 1600+: $1.6229
HUF75545S3-ND	HUF75545S3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Power Dissipation (Max): 270W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--

1 2 3 4 5 >

Hot Searches: cap alum 220uf 20% 80v thru hole cap alum 220uf 20% 63v thru hole cap alum 220uf 20% 16v thru hole cap alum 220uf 20% 10v thru hole cap alum 220uf 20% 50v thru hole cap alum 220uf 20% 25v thru hole cap alum 220uf 20% 35v thru hole cap alum 10uf 20% 80v thru hole cap alum 22uf 20% 80v thru hole cap alum 33uf 20% 80v thru hole cap alum 47uf 20% 80v thru hole cap alum 100uf 20% 80v thru hole cap alum 330uf 20% 80v thru hole cap alum 470uf 20% 80v thru hole cap alum 220uf 75v thru hole cap alum 220uf 20% 80v smd cap alum 220uf 20% 80v radial cap alum 0.1uf 20% 50v thru hole cap alum 47uf 20% 450v thru hole cap alum 39uf 20% 25v thru hole

Search Result:cap alum 220uf 20% 80v thru hole

Related Categories