PSMN3R3-80ES,127

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PSMN3R3-80ES,127 Application Field and Working Principle

The PSMN3R3-80ES,127 is a N-Channel Enhancement Mode MOSFET transistor manufactured by Infineon. This device is designed for high-temperature operation with a maximum junction temperature of 175°C, making it well suited for applications that require high temperature operation. It comes in D2PAK-3 package, a power package that enables operation up to its maximum 280V voltage rating. It features excellent on-resistance and an improved transconductance figure. The device is characterized by low gate charge, low gate-to-drain charge and low input and output capacitance.

This device is most commonly used as a switch gate in high-temperature applications such as motor control and power supply circuits. When the gate voltage is low, the transistor is off, and when the gate voltage is higher than the threshold level, the transistor is on. In this way, it can be used to control the voltage and current limiting of a circuit. This device can also be used in various high-voltage applications such as power supply and motor control.

The working principle of this MOSFET is based on the charge carrier mobility in a semiconductor. It is a type of field effect transistor (FET) in which the current flows through a channel formed between the source and the drain. An applied voltage on the gate terminal creates an electric field that influences the conductivity of the channel by changing the charge density of electrons. As the voltage is increased on the gate, the number of electrons that can flow through the channel increases and thereby increases the current between the source and the drain terminals.

The PSMN3R3-80ES,127 MOSFET can be used in high-temperature applications as it has a high maximum junction temperature of 175°C. Its D2PAK-3 power package enables operation up to its maximum 280V rating. Its features include low gate charge, low gate-to-drain charge, and low input and output capacitance. The device is most commonly used as a switch gate in high-temperature applications such as motor control and power supply circuits.

The PSMN3R3-80ES,127 is a powerful transistors with a range of features that make it suitable for a variety of applications. Its high maximum junction temperature, excellent on-resistance and improved transconductance figures makes it an ideal transistor for high-temperature applications. Its low gate charge, low gate-to-drain charge and low input and output capacitance enable it to be used in applications requiring precise control of voltage and current.

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