PSMN4R3-80PS,127

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The PSMN4R3-80PS,127 is a n-channel, insulated-gate field-effect transistors (IGFETs) that utilizes a metal-oxide semiconductor (MOS) structure to act as a voltage-controlled switch. It is specifically designed to minimize the on-resistance while maintaining low THD and EMI. This MOSFET meets the needs of next-generation applications requiring low power and fast switching times. This device is available in various package options to meet the requirements of various application fields, making it a versatile device.

The basic principle behind MOSFETs is based on how the electric current flows in the channel of the device. When a positive voltage is applied to the gate, the electric field attracts electrons from the channel, reducing the charge carriers. This reduces the resistance of the channel, allowing electric current to flow from the source to the drain. The resistance between the source and the drain is known as the drain-source resistance (RDS). The voltage that needs to be applied at the gate for the conductive channel to be formed is known as the threshold voltage (Vth).

The PSMN4R3-80PS,127 is unique in that it provides low power consumption and fast switching times. It has a 0.65V threshold voltage and an on-state resistance of 1.0 Ω which is improved by -40% compared to the previous generations. It also has a maximum drain source voltage of 80V and a drain-source current of 6.6A. This device is available in a power semi-standard plastic package option.

The PSMN4R3-80PS,127 is suitable for a variety of applications including motor control and automotive circuits, AC/DC and DC/DC tools, high frequency applications, converters, amplifiers, and more. These applications are suitable due to the device’s low power consumption and fast switching speed. Additionally, since this device uses an insulated gate technology, it is able to provide better resistance to gate oxide breakdown and gate-to-drain short-circuit.

In conclusion, the PSMN4R3-80PS,127 is a low power, fast switching insulated gate field-effect transistor with excellent parameter performance. Its low on-state resistance and high threshold voltage make it suitable for a variety of application fields, while its plastic package option makes it an excellent choice for a variety of designs.

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