Allicdata Part #: | HUF75542P3-ND |
Manufacturer Part#: |
HUF75542P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 75A TO-220AB |
More Detail: | N-Channel 80V 75A (Tc) 230W (Tc) Through Hole TO-2... |
DataSheet: | HUF75542P3 Datasheet/PDF |
Quantity: | 413 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2750pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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HUF75542P3 is a type of Insulated Gate Bipolar Transistor (IGBT) which stands for an easy to use, low-cost solution to power amplifying applications. It is part of the HUF field-effect transistor (FET) family of devices and is designed to produce a controlled voltage in applications with high power dissipation instead of the high input power required around a conventional PNP transistor. An HUF is a type of field-effect transistor (FET) that uses insulated gate bipolar junction transistors (IGBT) technology to provide efficient performance. The HUF75542P3 is a single IGBT device, with two sources (anode and cathode) and two gates (collector and emitter).
The HUF75542P3 is a first-generation IGBT device that moves from a low-power state to a high-power state when applying a large enough input voltage across the collector and emitter. The device is capable of controlling voltage up to 500 volts DC and dissipating up to 2 amps of power. This makes it suitable for use in driving high-power, low-voltage DC control circuits, such as motor and pump control. Consequently, the HUF75542P3 is widely used in the automotive industry when a lightweight, cost-effective solution is required.
The working principle of the HUF75542P3 is relatively simple. It consists of a pair of P-type and N-type diodes. When an input voltage is applied to the collector and emitter, these diodes begin to conduct, pulling the voltage across the gate terminals down. This causes current to flow in the channel, allowing the transistor device to be turned "on". Once "on", the device starts to dissipate power and triggers the output voltage to rise accordingly. By varying the input voltage, it is possible to accurately control the output voltage of the HUF75542P3.
In conclusion, the HUF75542P3 is a single IGBT transistor device with two sources, two gates, and are suitable for use in power amplifying applications. Its working principle is based on a pair of P-type/N-type diodes, and it is capable of controlling voltages of up to 500 volts DC and 2 amps of power. By carefully controlling the input voltage it is possible to accurately control the output voltage of the device.
The specific data is subject to PDF, and the above content is for reference
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