HUF75542P3 Allicdata Electronics
Allicdata Part #:

HUF75542P3-ND

Manufacturer Part#:

HUF75542P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 75A TO-220AB
More Detail: N-Channel 80V 75A (Tc) 230W (Tc) Through Hole TO-2...
DataSheet: HUF75542P3 datasheetHUF75542P3 Datasheet/PDF
Quantity: 413
Stock 413Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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HUF75542P3 is a type of Insulated Gate Bipolar Transistor (IGBT) which stands for an easy to use, low-cost solution to power amplifying applications. It is part of the HUF field-effect transistor (FET) family of devices and is designed to produce a controlled voltage in applications with high power dissipation instead of the high input power required around a conventional PNP transistor. An HUF is a type of field-effect transistor (FET) that uses insulated gate bipolar junction transistors (IGBT) technology to provide efficient performance. The HUF75542P3 is a single IGBT device, with two sources (anode and cathode) and two gates (collector and emitter).

The HUF75542P3 is a first-generation IGBT device that moves from a low-power state to a high-power state when applying a large enough input voltage across the collector and emitter. The device is capable of controlling voltage up to 500 volts DC and dissipating up to 2 amps of power. This makes it suitable for use in driving high-power, low-voltage DC control circuits, such as motor and pump control. Consequently, the HUF75542P3 is widely used in the automotive industry when a lightweight, cost-effective solution is required.

The working principle of the HUF75542P3 is relatively simple. It consists of a pair of P-type and N-type diodes. When an input voltage is applied to the collector and emitter, these diodes begin to conduct, pulling the voltage across the gate terminals down. This causes current to flow in the channel, allowing the transistor device to be turned "on". Once "on", the device starts to dissipate power and triggers the output voltage to rise accordingly. By varying the input voltage, it is possible to accurately control the output voltage of the HUF75542P3.

In conclusion, the HUF75542P3 is a single IGBT transistor device with two sources, two gates, and are suitable for use in power amplifying applications. Its working principle is based on a pair of P-type/N-type diodes, and it is capable of controlling voltages of up to 500 volts DC and 2 amps of power. By carefully controlling the input voltage it is possible to accurately control the output voltage of the device.

The specific data is subject to PDF, and the above content is for reference

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