Allicdata Part #: | 1727-4270-ND |
Manufacturer Part#: |
PSMN012-80PS,127 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 74A TO220AB |
More Detail: | N-Channel 80V 74A (Tc) 148W (Tc) Through Hole TO-2... |
DataSheet: | PSMN012-80PS,127 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.37387 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 148W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2782pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 74A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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APSMN012-80PS,127 is a single MOSFET type transistor, or a field-effect transistor (FET). It is an insulated-gate type of FET that consists of an insulated gate and a channel of semiconductor material between the source (S) and drain (D) terminals.
MOSFET transistors are used to control of the current, amplification of low signal current, and switching operations. As the name suggests, MOSFET stands for “Metal Oxide Semiconductor Field-Effect Transistor”. Compared to bipolar transistors, it has certain advantages such as low power dissipation, high impedance, and low switching losses.
The APSMN012-80PS,127 single MOSFET transistor has an ON resistance of about 12 ohms. It can handle a maximum DC drain current of 80A and has a maximum drain-source voltage of 100V. It also has a maximum gate-source voltage of 30V, and a maximum junction temperature of 175-degrees Celsius. Furthermore, the device also has a maximum gate charge of 640nC.
The APSMN012-80PS, 127 single MOSFET is heavily used in high-power applications such as motor control applications, laser power amplifiers, power converters and power amplifiers, high-brightness light control and automotive audio systems. They are used to convert electrical signals into electronic signals more efficiently. Additionally, they are also used in advanced switching applications such as high-speed switching, inductive load switching, and high-frequency communications.
The APSMN012-80PS,127 single MOSFET operates according to the principles of quantum mechanics and thermodynamics. Specifically, it works on the principle of quantum-level tunneling. When voltage is applied to the transistor’s gate terminal, the electrons flow from the source terminal to the drain terminal via the thin gate oxide layer. This causes the transistor to turn on, which allows the effective current to flow from the source terminal to the drain terminal.
Another important factor in the working of the APSMN012-80PS,127 single MOSFET transistor is the threshold voltage. The threshold voltage determines the behavior and performance of the transistor. When the input voltage is below the threshold voltage, the transistor turns off and current flow stops. When the input voltage is above the threshold voltage, the transistor turns on and current flow starts.
In conclusion, the APSMN012-80PS,127 single MOSFET is a versatile and powerful transistor, used in a wide variety of applications. With its wide operating temperature range and high efficiency, this single resistor MOSFET is an ideal choice for various applications requiring high power. It is a cost-effective and reliable component that can increase the performance and efficiency of many designs.
The specific data is subject to PDF, and the above content is for reference
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