Allicdata Part #: | HUF75545S3-ND |
Manufacturer Part#: |
HUF75545S3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 75A TO-262AA |
More Detail: | N-Channel 80V 75A (Tc) 270W (Tc) Through Hole I2PA... |
DataSheet: | HUF75545S3 Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 235nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 270W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK (TO-262) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75545S3 is a Single N-Channel High-Voltage UltraFET, which is a type of Field Effect Transistor (FET). FETs are solid-state devices possessing the desired characteristics of high impedance and control signal compatibility, making them especially suitable in applications such as switching, power control, signal amplification, and signal filtering.
The HUF75545S3 is a highly efficient device with a maximum current rating of 8A and a total gate charge of 110 nC. It has a wide operating range of -55°C to +175°C and is protected against voltages up to 550V, making it an ideal choice for a variety of industrial, automotive, and even off-highway applications, as well as radiation hardened designs.
In terms of its operation principle, the HUF75545S3 features an internal gate that controls the flow of electrons along the channel of the FET, thereby regulating the amount of current being passed through the device. This is done by the application of a voltage or electric field to the gate of the device, which alters or switches its channel resistance. This process enables FETs to act as switches for electrical signals.
The HUF75545S3 is an ideal choice for applications that require power control, such as motor control, HVAC systems, lighting systems, and even some security systems. Its extremely low on-state resistance further facilitates power efficiency and can help save on energy costs. Additionally, the device is well-suited for rectification and signal processing in general as it can handle large block signals with minimal distortion.
The HUF75545S3 is also capable of handling high frequencies and can be used in switching power supplies. Its high open loop gain combined with a low input capacitance makes it ideal for high-frequency signal amplification and filtering. Additionally, the device is well-suited for high-speed switching applications due to its superior switching characteristics, which result in improved efficiency.
Overall, the HUF75545S3 is a versatile, high-performance device that can be used in a variety of applications, from motor control and power conversion to signal processing and switching. Its superior switching capabilities as well as its low gate charge and total gate charge enable it to handle large current applications efficiently, making it the ideal choice for both industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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