PSMN4R4-80PS,127

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	306W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8400pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	125nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction:PSMN4R4-80PS,127 is a MOSFET from N-Channel, Silicon. It has a drain current of 80A, drain-source voltage of 40V, Gate Threshold voltage of 2.5V and RDS(on) of 4mohms. It is a small-signal transistor and suitable for DC and low frequency applications. It is also known for its low on-resistance, high current handling and excellent switching characteristics. Application Field:PSMN4R4-80PS,127 is used in various applications like power management, converters, LED and power inverters. It is particularly suitable for low voltage and high current applications because of its low RDS(on). It is used in many applications that require high power supply efficiency and fast response. It is also used in motor control, linear regulator, switching applications, high frequency circuits and amplifier circuits.Working Principle:PSMN4R4-80PS,127 works on the principle of MOSFETS (Metal-Oxide Semiconductor Field-Effect Transistors). MOSFETs are semiconductor devices that use an electric field to control the flow of current. It consists of three terminals- drain, gate and source. A voltage is applied across the gate and the source, which creates an electric field that controls the current flowing through the drain terminal. It acts as a switch, controlling the current based on the applied voltage. The on-resistance of the device is determined by the internal junction of the MOSFET.Advantages:PSMN4R4-80PS,127 has several advantages that make it suitable for a variety of applications. It has a high current handling capacity and low on-resistance, which makes it ideal for switching and power management applications. It also has good immunity to Electro-Magnetic Interference (EMI). The device is fast switching, with a switching speed of up to the MHz range. It also has a high input impedance, which is beneficial in applications where the input current needs to be low.Conclusion:PSMN4R4-80PS,127 is a MOSFET developed by N-Channel, Silicon. It has low on-resistance, high current handling and fast switching characteristics. It is used for a variety of applications including power management, converters, LED and power inverters. It is also suitable for low voltage, high current applications, due to its low RDS(on). It has several advantages like high current handling capacity, low on-resistance and good immunity to EMI, making it a reliable choice for many applications.

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