PSMN5R0-80PS,127 Allicdata Electronics
Allicdata Part #:

1727-4263-ND

Manufacturer Part#:

PSMN5R0-80PS,127

Price: $ 1.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V 100A TO220AB
More Detail: N-Channel 80V 100A (Tc) 270W (Tc) Through Hole TO-...
DataSheet: PSMN5R0-80PS,127 datasheetPSMN5R0-80PS,127 Datasheet/PDF
Quantity: 1235
1 +: $ 1.26000
50 +: $ 1.01518
100 +: $ 0.91369
500 +: $ 0.71064
1000 +: $ 0.58882
Stock 1235Can Ship Immediately
$ 1.39
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 270W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6793pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The PSMN5R0-80PS,127 is a part of the larger family of transistors and FETs, MOSFETs. It is a single power MOSFET (metal-oxide-semiconductor field-effect transistor). Single MOSFET devices are used as switches or amplifying devices in power electronics and high-end audio amplifiers.

The specific characteristics of this single MOSFET device include an excellent adiabatic design for low power loss in switching operations. This makes the unit suitable for applications where efficiency and low power consumption are essential. It also has a low gate-charge design that helps in reducing the switching loss. This makes it ideal for high-frequency switching applications. It has a very low threshold voltage with a wide output voltage window. This helps in improved efficiency and reliability in the circuit.

The typical applications of the PSMN5R0-80PS,127 include DC-DC and AC-DC converters, motor drives, power inverters, high frequency switching, and uninterruptible power supplies (UPS). This single MOSFET device is used in these types of applications mainly because of its robustness, reliability, and low-power consumption. It has been tested for millions of cycles and has proven to be a reliable device.

The working principle of the PSMN5R0-80PS,127 is quite simple. It works by controlling the current flow between the source and the drain terminals. A voltage is applied to the gate terminal, which creates a small electrical field between the gate and the source terminal. This field then modulates the width of the drain and source channel, which controls the flow of current. This process allows the current to be switched on and off at high speeds, making it suitable for high-frequency switching applications.

In conclusion, the PSMN5R0-80PS,127 is a single power MOSFET device that is mainly used for high-frequency switching applications. It has excellent adiabatic design and low gate-charge design that make it ideal for power electronics and high-end audio amplifiers. It has been tested for millions of cycles and is a reliable and robust device. It is also very efficient in regards to power consumption and has excellent output voltage window.

The specific data is subject to PDF, and the above content is for reference

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