PSMN3R5-80PS,127 Allicdata Electronics
Allicdata Part #:

1727-5282-ND

Manufacturer Part#:

PSMN3R5-80PS,127

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V 120A TO220AB
More Detail: N-Channel 80V 120A (Tc) 338W (Tc) Through Hole TO-...
DataSheet: PSMN3R5-80PS,127 datasheetPSMN3R5-80PS,127 Datasheet/PDF
Quantity: 3114
1 +: $ 1.79550
50 +: $ 1.44900
100 +: $ 1.30410
500 +: $ 1.01430
1000 +: $ 0.84042
Stock 3114Can Ship Immediately
$ 1.98
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 338W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9961pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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A PSMN3R5-80PS,127 is a type of transistor, specifically a Field Effect Transistor of the MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) type classified as a "Single". This type of FET is a voltage-controlled device that, unlike the bipolar transistor, uses no biasing elements like base resistors. Instead, the entire device is controlled by a single voltage at the gate, and the electrical flow is conducted through a single channel.

The main application field for the PSMN3R5-80PS,127 is in power electronics circuits, such as those used in automotive applications like electric vehicles. It is also used extensively in computers and other digital devices, where its high speed, large current capacity, and small size make it ideal for power transmission, data transfer, and switching applications. Additionally, this kind of FET is often used in audio amplifier circuits and audio processing applications.

The working principle of the PSMN3R5-80PS,127 transistor is based on the electric field effect that occurs when a voltage is applied to the gate. When the voltage at the gate is positive, the electrons located at the interface between the gate and the source are attracted towards the gate. This creates an electric field that affects the electric current passing through the channel between the source and the drain. As the voltage applied to the gate increases, the current passing through the channel also increases and this current is used to controls switches and other circuits.

In addition to its application in power electronics, the PSMN3R5-80PS,127 can also be used in many other devices to provide switching and modulation functions. Some of these devices include radio frequency circuits, digital logic circuits, high-speed switching circuits, logic switches, mouse and keyboard interfaces, and pulse modulation devices. All of these devices use the FET’s electrical field effect to control the flow of current through the channel.

Because of its low cost and easy availability, the PSMN3R5-80PS,127 is used widely in many different applications. As a result, new versions of this FET are constantly being developed and improved to meet the demand for new and higher performance devices. This makes it a very important part of modern electronics and many other applications.

The specific data is subject to PDF, and the above content is for reference

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