Allicdata Part #: | 1727-5282-ND |
Manufacturer Part#: |
PSMN3R5-80PS,127 |
Price: | $ 1.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 120A TO220AB |
More Detail: | N-Channel 80V 120A (Tc) 338W (Tc) Through Hole TO-... |
DataSheet: | PSMN3R5-80PS,127 Datasheet/PDF |
Quantity: | 3114 |
1 +: | $ 1.79550 |
50 +: | $ 1.44900 |
100 +: | $ 1.30410 |
500 +: | $ 1.01430 |
1000 +: | $ 0.84042 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 338W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9961pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A PSMN3R5-80PS,127 is a type of transistor, specifically a Field Effect Transistor of the MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) type classified as a "Single". This type of FET is a voltage-controlled device that, unlike the bipolar transistor, uses no biasing elements like base resistors. Instead, the entire device is controlled by a single voltage at the gate, and the electrical flow is conducted through a single channel.
The main application field for the PSMN3R5-80PS,127 is in power electronics circuits, such as those used in automotive applications like electric vehicles. It is also used extensively in computers and other digital devices, where its high speed, large current capacity, and small size make it ideal for power transmission, data transfer, and switching applications. Additionally, this kind of FET is often used in audio amplifier circuits and audio processing applications.
The working principle of the PSMN3R5-80PS,127 transistor is based on the electric field effect that occurs when a voltage is applied to the gate. When the voltage at the gate is positive, the electrons located at the interface between the gate and the source are attracted towards the gate. This creates an electric field that affects the electric current passing through the channel between the source and the drain. As the voltage applied to the gate increases, the current passing through the channel also increases and this current is used to controls switches and other circuits.
In addition to its application in power electronics, the PSMN3R5-80PS,127 can also be used in many other devices to provide switching and modulation functions. Some of these devices include radio frequency circuits, digital logic circuits, high-speed switching circuits, logic switches, mouse and keyboard interfaces, and pulse modulation devices. All of these devices use the FET’s electrical field effect to control the flow of current through the channel.
Because of its low cost and easy availability, the PSMN3R5-80PS,127 is used widely in many different applications. As a result, new versions of this FET are constantly being developed and improved to meet the demand for new and higher performance devices. This makes it a very important part of modern electronics and many other applications.
The specific data is subject to PDF, and the above content is for reference
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