Allicdata Part #: | 1727-5896-ND |
Manufacturer Part#: |
PSMN6R5-80PS,127 |
Price: | $ 1.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V TO220AB |
More Detail: | N-Channel 80V 100A (Tc) 210W (Tc) Through Hole TO-... |
DataSheet: | PSMN6R5-80PS,127 Datasheet/PDF |
Quantity: | 3893 |
1 +: | $ 1.24740 |
50 +: | $ 1.00535 |
100 +: | $ 0.90481 |
500 +: | $ 0.70376 |
1000 +: | $ 0.58312 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4461pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.9 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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PSMN6R5-80PS,127 is a single N-type enhancement mode power MOSFET.
A MOSFET (metal oxide semiconductor field effect transistor) is a type of transistor that uses an electric field to control the flow of current in an electronic circuit. It’s one of the most popular and versatile types of transistors due to its low power consumption, high speed, and ease of use.
The PSMN6R5-80PS,127 is specifically designed to be used in the industrial, automotive, and consumer applications. It offers excellent RF performance and very low gate-drain capacitance, making it suitable for high-performance applications that require high gain, reduced thermal resistance, and a low RDS₀N.
The PSMN6R5-80PS,127 is a very versatile device with a variety of features and capabilities. It can be used in the following applications: switching and amplifying circuits, low-voltage DC-DC converters and motor control, battery protection and DEO, solar power and smart energy, audio and signal transmission, automotive sensing and control, and flat-panel displays.
When it comes to the working principle of the PSMN6R5-80PS,127, it uses four distinct characteristics. These characteristics are the threshold voltage, drain current, gate voltage, and conductance.
The threshold voltage of the PSMN6R5-80PS,127 is the voltage required to turn on the device, allowing current to flow freely through it. The drain current is the amount of current that is flowing through the device. The gate voltage is the voltage that is applied to the device to regulate the flow of current. And finally, the conductance is the measure of the device’s ability to allow current to pass through it.
The PSMN6R5-80PS,127 is based on ann-type enhancement MOSFETs, meaning that it can be used in applications that require low-level switching, low loss and high efficiency. The device’s small size and low power consumption mean that it is perfect for use in portable and low power applications. This makes it a great choice for designers looking for a reliable and efficient MOSFET solution.
Overall, the PSMN6R5-80PS,127 is a high-performance power MOSFET that is perfect for numerous applications. It has a wide variety of features and capabilities, making it a great option for any situation. With its low power consumption, high speed, and ease of use, this particular MOSFET is sure to live up to its reputation.
The specific data is subject to PDF, and the above content is for reference
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