SIRA84DP-T1-GE3

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The SIRA84DP-T1-GE3 is a single N-channel enhanced RF Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is designed specifically for digital and analog switching applications. The device is capable of controlling large currents and thus is suitable for many high-power applications, such as Radio Frequency (RF) amplifiers and switching circuits. It has an operating temperature range of -55 to 125 °C and is available in the TO-263-6L and TO-251-8L packages.

The SIRA84DP-T1-GE3 features a low On-resistance along with a low Gate threshold voltage, which makes it suitable for use in high-side, low-side and low-level switching applications. In addition, the device has a low output capacitance, allowing for a higher switching frequency. The SIRA84DP-T1-GE3 also has very good thermal stability and a low input capacitance, which make it an ideal choice for applications requiring high-speed switching.

The working principle of the SIRA84DP-T1-GE3 is based on the MOSFET structure. It consists of a gate electrode, a drain electrode, and a source electrode. When the gate voltage is applied, it creates an electric field in the underlying substrate which causes electrons to be attracted to the gate. This in turn creates a channel between the source and drain, allowing current to flow. The amount of current which can flow through the channel is controlled by the gate voltage.

The SIRA84DP-T1-GE3 has a wide range of possible applications ranging from low voltage to high voltage operations. Some examples include motor control, power switching push-pull converters, solenoid driver, motor controllers and high-speed switching applications. Due to its low On-resistance and high switching speed, it is also suitable for use in circuit applications such as DC-DC converters and class-D audio amplifiers.

In summary, the SIRA84DP-T1-GE3 is a single N-channel enhanced RF MOSFET that is suitable for high-power, high-frequency switching applications. It has a low On-resistance, low gate threshold voltage, low output capacitance, suitable operating temperature range, and low input capacitance. All these characteristics make it an ideal choice for a wide range of applications requiring high-speed switching.

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