Allicdata Part #: | SIRA18DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIRA18DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 33A PPAK SO-8 |
More Detail: | N-Channel 30V 33A (Tc) 3.3W (Ta), 14.7W (Tc) Surfa... |
DataSheet: | SIRA18DP-T1-GE3 Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 14.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 15V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FET stands for Field Effect Transistor and is a type of transistor that only allows current flow or amplification when a varying small voltage is applied to its gate or base. The SIRA18DP-T1-GE3 is a type of FET. It is a single, low power depletion-mode FET with N-channel enhancement.
The SIRA18DP-T1-GE3 is typically used in applications where low power levels are required as it is a low power depletion-mode FET. It is also commonly used in digital logic circuits, switching circuits, and data signal buffers. Its operating voltage is 18 volts and it has a gate-to-source voltage of 4.5 volts. It can be used in signal input, signal conditioning, amplification, and switching applications.
The working principle of the SIRA18DP-T1-GE3 is based on the concept of current flowing through an electrically charged gate. A gate is basically a three-terminal device that controls the current in a semiconductor device. A gate may be a FET, an MOSFET, or a JFET, depending on the type. When a small voltage is applied to the gate, current flow is triggered which controls the current in the device.
The SIRA18DP-T1-GE3 has a N-channel enhancement mode. This means that when a small voltage is applied to the gate, electrons will move towards the gate and the current carrying capacity of the channel increases. This means that the device will have increased gain and switching capability. It also means that the device can be used as a switch or amplifier.
The SIRA18DP-T1-GE3 can be used to switch circuits on or off depending on the signal level. It is a low voltage, low power field effect transistor that can be used in signal input, signal conditioning, and amplification applications. Its low power depletion-mode configuration makes it an ideal choice for circuits that require low power levels. Its N-channel enhancement mode also makes it a good choice for data signal buffers and amplification.
The specific data is subject to PDF, and the above content is for reference
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