SIRA50ADP-T1-RE3 Discrete Semiconductor Products

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The SIRA50ADP-T1-RE3 MOSFET is a member of the Application Specific MOSFET family of products from Vishay Siliconix. It is a single N-channel vertical trench MOSFET with a superior thermal performance, low drain-source on-state resistance and low gate charge. It is specifically designed for AC-DC and DC-DC industrial applications and is available in a TO-220 with Clip-and-Seal package.

The MOSFET is typically used in power switch applications where high current is required to achieve fast switching times. It is also suitable for load switching and bidirectional applications, as well as current regulator and power amplifier operation. The device is well suited for use in DC-DC step up or down converters, battery chargers, AC-DC adapters, active ORing circuits, high power LED auto switch lighting and uninterruptible power supplies (UPS).

The SIRA50ADP-T1-RE3 MOSFET features a vertical N-channel MOS transistor with integral high voltage ESD protection and current limiting on the gate. It has low gate-charge, low on-state resistance and low capacitance. The device also includes an integrated body-diode with low reverse recovery time and leakage current, ensuring high-speed switching operation.

The SIRA50ADP-T1-RE3 MOSFET operates on a wide VGS characteristics that makes its operation flexible and wide-range ESD protection. It has a typically rated drain-source breakdown voltage of 95V, a maximum drain-source breakdown voltage of 125V, and a maximum drain-source on-state resistance of 50 mΩ. Its maximum transconductance is 4.3 S (at 3.5V and 10mA drain current) and maximum gate-source voltage is +/- 25V. Its maximum continuous drain current is 45A.

Working Principle: In operation, when the Gate receives a positive voltage, the drain current (ID) increases as the gate-source voltage (VGS) is increased, until it reaches its limiting value, ID(sat). At this point the device is considered to be in saturation. When the channel is saturated, the drain current is virtually independent of the gate-source voltage. When the Gate receives a negative voltage the channel negative voltage increases, making the device reverse biased until it turns off again by the field effect.

The SIRA50ADP-T1-RE3 MOSFET is ideal for high-power applications due to its high current carrying capacity and low gate charge. Its low on-state resistance allows it to provide high efficiency in circuit designs and its ESD protection allows it to be used in applications prone to electrostatic discharges. This device is a great choice for industrial applications that require fast switching times, low drain-source on-state resistance, and low gate charge.

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