SIRA64DP-T1-GE3

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The SIRA64DP-T1-GE3 is a Single-sided, double-poled N-Channel enhancement type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with a Breakdown Voltage (BVDSS) of 64V, a maximum drain-source On-Resistance (RDS(on)) of 0.014 ohms and a maximum continuous drain current (ID) of 24A. This MOSFET is designed for high power applications such as power management systems, UPS, LED lighting, automotive, and high current industrial systems. Thus, SIRA64DP-T1-GE3 can deliver far greater power than a comparably sized MOSFET and is suitable for applications where low resistance and high power is required.

This MOSFET is constructed with a vertical N-Channel Super-junction planar structure using toggle structure technology that minimizes its on-resistance (RDS(on)). This technology is achieved by connecting the parallel lines between source and drain closer together resulting in a shorter distances between source and drain reduces the resistance and hence increases the current flowing through the MOSFET. Additionally, its unique construction also reduces the capacitance between drain and source with the gate, leading to higher switching frequency, enabling improved system performance.

The SIRA64DP-T1-GE3 is fabricated with a p-type body punch-through structure which helps to dissipate heat more efficiently and its drain-source voltage rating of 65V ensures that it can handle high voltages; this plus its low RDS(on) allows it to handle up to 24A of continuous current. Its internal gate charge (Qg) of 8.5nC adds to its high current capabilities, offering higher power density and fast switching time.

Operating Principle of SIRA64DP-T1-GE3: The SIRA64DP-T1-GE3 operates on an enhancement-mode, which means the MOSFET is turned off when the gate-source voltage, VG is equal to 0V, and is turned on when VG is greater than the threshold voltage of the MOSFET, Vth. The drain can conduct current when the MOSFET is turned on, and it will be off when the gate voltage is too low or not supplied. This process is called electrostatic control, as the gate voltage determines the source-drain current.

The amount of current that is allowed to flow through the MOSFET is governed by the drain-source voltage and the drain current. When the drain-source voltage increases, the drain current also increases. The RDS(on) is determined by the drain current and the gate voltage. If the gate voltage is too high, the MOSFET can be overdriven and start to conduct even when the gate voltage is low. This will cause the MOSFET to become more vulnerable to failure.

Applications:SIRA64DP-T1-GE3 is suitable for use in a vast range of applications where high current and low resistance are required. These include power management systems, UPS, LED lighting, automotive, and high current industrial systems. Due to its low RDS(on) and high current capabilities, it is well suited for applications where high power is required. Its high operational frequency also makes it suitable for switching applications in data communications, motor control, and power supply systems.

Conclusion: In conclusion, the SIRA64DP-T1-GE3 MOSFET is an ideal power component for many applications that require high power and low resistance. It is well-suited for high current applications such as power management systems, UPS, LED lighting, automotive, and industrial systems due to its low RDS(on) and high current capabilities. In addition, its high operational frequency makes it suitable for data communication, motor control, and power supply systems.

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