SIRA01DP-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIRA01DP-T1-GE3 is a single-gate P-channelenhancement mode field-effect transistor (FET) with optimized performance characteristics. It is typically used as an AC current switch, but can also fulfill the role of an active DC current source. As its design is based on a highly advanced silicon-on-insulator (SOI) technology, it exhibits extremely low on-resistance (R_DS(ON)) and high gate-threshold voltage. This technology also makes the device extremely effective at preventing off-state leakage currents.

The SIRA01DP-T1-GE3 works by controlling the flow of current between source and drain electrodes. Power is supplied to the source electrode, and the gate electrode is used to control the current. The resistance between the source and drain electrodes is modulated by the voltage of the gate electrode. When the voltage on the gate electrode is high, the on-resistance is low and current is allowed to flow between source and drain electrodes. When the voltage on the gate electrode is low, the on-resistance is high and current is blocked. This is known as ‘enhancement’ mode, where the current is ‘enhanced’ by increasing the gate voltage.

The main application field of the SIRA01DP-T1-GE3 includes switching of digital LCDs and LED backlights, as well as AC and DC LED lighting with high efficiency and low power consumption. It is also used in power supplies, signal processing units (spds), digital-to-analog and analog-to-digital converters, audio amplifiers, and switching amplifiers. Additionally, it can be implemented in vehicle-speed signal processing and other high-frequency signal processing circuits.

Two of the most useful features of the SIRA01DP-T1-GE3 are its low on-resistance (R_DS(ON)) and high off-state impedance. The low R_DS(ON) enables a higher apparent current-carrying capacity and lower power losses. The high off-state impedance reduces the chances of false triggering, as the device switches off when the voltage of the gate electrode is low. This makes it even more effective for high-frequency applications. It also offers a low capacitance between the drain and substrate, ensuring minimal power loss and reducing power consumption.

The SIRA01DP-T1-GE3 has a number of advantages over other FETs and MOSFETs. Its SOI technology gives it extremely low on-resistance and high gate-threshold voltage, and its high off-state impedance minimizes false triggering. This makes it ideal for DC and AC switching applications, with high efficiency and low power consumption. It is also highly resistant to power noise and ESD, which makes it suitable for applications in industrial and automotive electronics. With these features, and its ease of implementation, the SIRA01DP-T1-GE3 is an ideal solution for many electronic systems.

The specific data is subject to PDF, and the above content is for reference