SIRA72DP-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.4V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	56.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3240pF @ 20V
Vgs (Max):	+20V, -16V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 4.5V
Series:	TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SIRA72DP-T1-GE3 is a discrete P-Channel MOSFET (Metal-Oxide-Semiconductor Field-effect Transistor) commonly used in power management and switching applications. It is capable of providing both high- and low-side switching, making it a versatile device for many applications. It is also capable of operating at low voltages, which make it well-suited for small portable electronic devices, such as mobile phones, laptops, and tablets.The SIRA72DP-T1-GE3 is a enhancement-type MOSFET, meaning that it can be used in both high- and low-side configuration. The high side configuration creates a source gate voltage (Vgs), which is higher than the source voltage (Vss). This forces the transistor to switch off and on, allowing for efficient and precise power management. The low-side configuration is used when the gate voltage can be effectively lowered, turning the transistor off and on as necessary. In high power environments, the low-side configuration allows the transistor to switch off and on more quickly, which can greatly improve system efficiency.The SIRA72DP-T1-GE3 also has a number of features that make it an attractive device for many applications. It has a low input capacitance, which allows it to operate at lower voltages, making it an ideal choice for small portable electronic devices. Additionally, it has a low drain-source resistance (Rds(on)), which allows it to handle high current without affecting the drain-source voltage (Vds). This makes it suitable for switching power from one electronic device to another, making it a useful device for many applications.In addition to its features, the SIRA72DP-T1-GE3 is relatively easy to use. It has a straightforward structure, with the source, the gate, and the drain. The source is the input and the drain is the output. The current is passed through the semiconductor device when the gate is activated, allowing the transistor to switch on and off. This makes it relatively simple to configure and offers a degree of flexibility for power management.Overall, the SIRA72DP-T1-GE3 is an effective and reliable transistor, making it an ideal choice for power management and switching applications. With its range of features and its straightforward construction, it is a great fit for a variety of applications, making it an attractive choice for many engineers and designers.

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