Allicdata Part #: | SIRA52ADP-T1-RE3TR-ND |
Manufacturer Part#: |
SIRA52ADP-T1-RE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 40V PPAK SO-8 |
More Detail: | N-Channel 40V 41.6A (Ta), 131A (Tc) 4.8W (Ta), 48W... |
DataSheet: | SIRA52ADP-T1-RE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4.8W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 20V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 1.63 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 41.6A (Ta), 131A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIRA52ADP-T1-RE3 is a single-source discrete N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is used for controlling or switching high-voltage DC signals or for switching AC signals. This type of MOSFET is operated by modulating a voltage that is applied to its gate terminal, which changes the current carried by the channel between the Drain and the Source, and thus can be used to control or switch higher voltage or current.
The SIRA52ADP-T1-RE3 is a highly reliable MOSFET with a good switching speed, low on-state resistance, and high current capability. Its high-voltage tolerance and low power loss make it suitable for use in both AC and DC applications. It can also be used in high-frequency switching applications, since it has a low parasitic capacitance. It has a wide range of Drain-Source Voltage and Gate-Source Voltage ratings, allowing it to be used in a variety of applications. It is also available in different packages, allowing it to be used in tight spaces.
The working principle of the SIRA52ADP-T1-RE3 MOSFET is based on the principle of field-effect transistor operation. When a positive voltage is applied to the Gate port, it creates an electric field that attracts electrons from the source region, creating an inversion layer. This inversion layer modulates the current flow through the channel between the Drain and Source. The higher the Gate-Source voltage, the wider the inversion layer and the higher the current flow. The MOSFET can be used as an amplifier, switch, or voltage regulator, depending on the application.
The SIRA52ADP-T1-RE3 can be used in a variety of applications. It can be used as a switch to turn a device on or off, as an amplifier to increase the gain of a signal, or as a regulator to keep a voltage constant. It can also be used in power converters, switching power supplies, or motor controls. This type of MOSFET is also often used in automotive electronics, such as for controlling ignition timing or the fuel injectors. It can also be used in other types of electronics, such as for controlling the current in an LCD beacon.
The SIRA52ADP-T1-RE3 is a highly reliable and versatile MOSFET. Its low on-state resistance and low power loss make it suitable for use in both AC and DC applications. It can be used to switch high-voltage DC signals or AC signals, or to control or switch higher voltage or current. Its wide range of Drain-Source Voltage and Gate-Source Voltage allows it to be used in a variety of applications. With its high-voltage tolerance and low parasitic capacitance, it is an ideal choice for use in both high-frequency switching applications and power converters.
The specific data is subject to PDF, and the above content is for reference
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