SIRA14DP-T1-GE3

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The SIRA14DP-T1-GE3 is one of a wide range of enhancements to IR (Infrared) field effect transistors (FETs). This particular device is suitable for use in a variety of applications where low power and fast switching speeds are desired. It has an impressive Drain Source breakdown voltage (VDSS) of 1400V, which, when coupled with its maximum drain current rating of 8A, makes it extremely appropriate for use in power generation and management scenarios.

In its simplest form, a FET is an electronic component that can be used as an amplifier, switch or as an effective voltage regulator. Functionally, it looks a lot like a regular transistor, with the drain, source and gate being the three terminals. The FET works with an electric field to provide quite significant voltage or current control and switching via the one controlling terminal (the gate). The SIRA14DP-T1-GE3 is a PMOS device with a maximum Drain Source voltage of 1400 volts and a maximum drain current rating of 8 Amperes. It is classified under the Transistors – FETs, MOSFETs – Single category.

Before examining the various applications of the SIRA14DP-T1-GE3, it is important to understand the underlying working principles of FETs in greater detail. Essentially, the Source, Drain and Gate terminals of the FET operate as follows, when a positive voltage is applied to the Gate:

• The voltage on the Gate acts as a controller terminal and this creates an electric field which penetrates into the semiconductor channel between the Source and Drain.
• The electric field then controls the number of available electrons in the channel.
• As a result, the current flow between the Source and Drain is restricted, which makes the FET behave like a switch.

The SIRA14DP-T1-GE3 can be used in a variety of different scenarios; however, it is particularly well suited to power generation and management. Not only does it have an impressive VDSS of 1400V and a maximum drain current rating of 8A, but it is also able to do so in an efficient manner, with a power saving rating of 1.9 W. In addition, it also works well in amplifier applications, due to its high voltage and current breakdowns. Moreover, the switch-off time is quite impressive, which makes it possible to reach fast switching speeds.

In conclusion, the SIRA14DP-T1-GE3 was designed as an upgraded version of an IR field effect transistor. It is suitable for a variety of applications, particularly those where power management, generation, and amplifier applications are required. It has an impressive Drain Source breakdown voltage of 1400V, which, when coupled with the maximum drain current rating of 8A, makes this device particularly useful in these type of applications.

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