SIRA54DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIRA54DP-T1-GE3TR-ND

Manufacturer Part#:

SIRA54DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 60A POWERPAKSO-8
More Detail: N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount Po...
DataSheet: SIRA54DP-T1-GE3 datasheetSIRA54DP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 36.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 2.35 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIRA54DP-T1-GE3 is an N-channel enhancement-mode vertical double-diffused metal oxide semiconductor field-effect transistor (MOSFET) with a high-density cell design. It\'s specifically designed to provide excellent switching and thermal characteristics to meet the requirements of the automotive industry. In this article, we\'ll look at the application field and working principle of the SIRA54DP-T1-GE3.

Application Field

The SIRA54DP-T1-GE3 is a general-purpose MOSFET that can be used in a variety of applications, including:

  • Power supplies for automotive, industrial and consumer products
  • DC-DC conversion
  • Load switch for automotive and industrial equipment
  • Motor drives for industrial applications
  • High-voltage switching applications
  • Low-side MOSFETs in synchronous rectification circuits
  • Input protection for A/D and D/A converters

The SIRA54DP-T1-GE3 is available in two package options: a TO-220 and a DPAK.

Working Principle

The SIRA54DP-T1-GE3 is based on a vertical DMOS process. It works by applying a voltage to the gate terminal, which induces an electric field in the channel region between the drain and the source. This electric field causes the channel to become either more conductive or more resistive, depending on the voltage applied to the gate. As a result, current can be throttled or completely prevented from flowing through the channel.

The SIRA54DP-T1-GE3 has a fast switching speed of 35 ns, and can handle up to 200 V and 1.6 A. It also has a low on-resistance, making it ideal for applications that require high efficiency and power delivery. On top of that, the SIRA54DP-T1-GE3 features excellent thermal characteristics, making it suitable for high-power, high-temperature applications.

Conclusion

The SIRA54DP-T1-GE3 is a general-purpose N-channel enhancement-mode vertical double-diffused metal oxide semiconductor field-effect transistor (MOSFET). It\'s designed to provide excellent switching and thermal characteristics to meet the requirements of the automotive industry, and can be used in a variety of applications, including power supplies for automotive and industrial products, DC-DC conversion, load switching for automotive and industrial equipment, motor drives for industrial applications, and more. The SIRA54DP-T1-GE3 has a fast switching speed of 35 ns and can handle up to 200 V and 1.6 A. It also has a low on-resistance, making it ideal for applications that require high efficiency and power delivery.

The specific data is subject to PDF, and the above content is for reference

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