Allicdata Part #: | SIRA54DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIRA54DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 60A POWERPAKSO-8 |
More Detail: | N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount Po... |
DataSheet: | SIRA54DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 36.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5300pF @ 20V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 4.5V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 2.35 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIRA54DP-T1-GE3 is an N-channel enhancement-mode vertical double-diffused metal oxide semiconductor field-effect transistor (MOSFET) with a high-density cell design. It\'s specifically designed to provide excellent switching and thermal characteristics to meet the requirements of the automotive industry. In this article, we\'ll look at the application field and working principle of the SIRA54DP-T1-GE3.
Application Field
The SIRA54DP-T1-GE3 is a general-purpose MOSFET that can be used in a variety of applications, including:
- Power supplies for automotive, industrial and consumer products
- DC-DC conversion
- Load switch for automotive and industrial equipment
- Motor drives for industrial applications
- High-voltage switching applications
- Low-side MOSFETs in synchronous rectification circuits
- Input protection for A/D and D/A converters
The SIRA54DP-T1-GE3 is available in two package options: a TO-220 and a DPAK.
Working Principle
The SIRA54DP-T1-GE3 is based on a vertical DMOS process. It works by applying a voltage to the gate terminal, which induces an electric field in the channel region between the drain and the source. This electric field causes the channel to become either more conductive or more resistive, depending on the voltage applied to the gate. As a result, current can be throttled or completely prevented from flowing through the channel.
The SIRA54DP-T1-GE3 has a fast switching speed of 35 ns, and can handle up to 200 V and 1.6 A. It also has a low on-resistance, making it ideal for applications that require high efficiency and power delivery. On top of that, the SIRA54DP-T1-GE3 features excellent thermal characteristics, making it suitable for high-power, high-temperature applications.
Conclusion
The SIRA54DP-T1-GE3 is a general-purpose N-channel enhancement-mode vertical double-diffused metal oxide semiconductor field-effect transistor (MOSFET). It\'s designed to provide excellent switching and thermal characteristics to meet the requirements of the automotive industry, and can be used in a variety of applications, including power supplies for automotive and industrial products, DC-DC conversion, load switching for automotive and industrial equipment, motor drives for industrial applications, and more. The SIRA54DP-T1-GE3 has a fast switching speed of 35 ns and can handle up to 200 V and 1.6 A. It also has a low on-resistance, making it ideal for applications that require high efficiency and power delivery.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SIRA88DP-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 30V 45.5A POW... |
SIRA20DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 25V POWERPA... |
SIRA12BDP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30VN-Channe... |
SIRA10BDP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30VN-Channe... |
SIRA58ADP-T1-RE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET N-CH 40VN-Channel ... |
SIRA01DP-T1-GE3 | Vishay Silic... | 0.41 $ | 1000 | MOSFET P-CH 30V POWERPAK ... |
SIRA54DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 60A POWER... |
SIRA62DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30VN-Channe... |
SIRA52ADP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 40V PPAK SO... |
SIRA22DP-T1-RE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 25V 60A POWER... |
SIRA02DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A PPAK ... |
SIRA34DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIRA36DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIRA00DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 100A PPAK... |
SIRA60DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 100A POWE... |
SIRA50ADP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 40V PPAK SO... |
SIRA52DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 60A PPAK ... |
SIRA18ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 30.6A POW... |
SIRA96DP-T1-GE3 | Vishay Silic... | 0.14 $ | 6000 | MOSFET N-CH 30V 16A POWER... |
SIRA84DP-T1-GE3 | Vishay Silic... | 0.15 $ | 3000 | MOSFET N-CH 30V 60A POWER... |
SIRA12DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 25A PPAK ... |
SIRA10DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 60A PPAK ... |
SIRA14DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 58A PPAK ... |
SIRA16DP-T1-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 30V D-S PPAK ... |
SIRA26DP-T1-RE3 | Vishay Silic... | 0.22 $ | 3000 | MOSFET N-CH 25V 60A POWER... |
SIRA24DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 25V 60A POWER... |
SIRA32DP-T1-RE3 | Vishay Silic... | 0.34 $ | 3000 | MOSFET N-CH 25V 60A POWER... |
SIRA72DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 60A POWER... |
SIRA64DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A POWER... |
SIRA64DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A POWER... |
SIRA66DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A POWER... |
SIRA04DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIRA06DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIRA58DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 60A PPAK ... |
SIRA90DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 100A POWE... |
SIRA90DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 100A POWE... |
SIRA80DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30V POWERPA... |
SIRA50DP-T1-RE3 | Vishay Silic... | 0.56 $ | 1000 | MOSFET N-CH 40V PWRPAK SO... |
SIRA18DP-T1-RE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET N-CH 30V 33A POWER... |
SIRA18DP-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 30V 33A PPAK ... |
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