SIRA88DP-T1-GE3 Discrete Semiconductor Products

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The SIRA88DP-T1-GE3 is a N-Channel MOSFET that can be used in various systems, especially in high frequency power applications. The device is an insulated-gate bipolar transistor (IGBT) with a low on-resistance, low gate charge, and low gate-to-drain charge ratio. It is suitable for many applications including power supply for adapters and servers, high frequency switching and protection circuits for consumer electronics, and rectification applications.

The SIRA88DP-T1-GE3 is a single-ended N-Channel MOSFET, which means it has one super-junction MOSFET cell and one drain. The device has a small footprint and is easy to mount, making it suitable for use in small form factor applications. The device has an ultra-low on-state resistance of 0.033 Ω, a low gate charge of 6.8 nC, and a low gate-to-drain charge ratio of 3.2 Ω. This allows for fast switching times and low gate drive power consumption.

The SIRA88DP-T1-GE3 can handle up to 40V of source and sink voltages, making it ideal for applications that require high-voltage mOSFETs. It also has an ESD rating of 8 kV and a dv/dt rating of 10 V/ns, making it suitable for use in harsh environments. The device is rated for up to 20 A of continuous drain current and up to 35 A of peak drain current, making it suitable for applications that require high power.

The SIRA88DP-T1-GE3 is a fast switching device, thanks to its low gate charge and low gate-to-drain charge ratio. The device has a fast turn-on time of 16 ns, allowing it to switch rapidly and efficiently. Additionally, the device has a low input capacitance of just 0.8 nF, allowing it to operate at higher frequencies and to handle high speed signals.

The SIRA88DP-T1-GE3 is a versatile device that can be used in various applications. It is suitable for use in power supplies, motor controls, high-frequency switching, protection circuits, and rectification applications. The device is ideal for use in applications that require high-voltage mOSFETs and is also well-suited for automotive and industrial applications.

More and more applications now require high-frequency, high-voltage MOSFETs, and the SIRA88DP-T1-GE3 is an ideal solution. The device has excellent performance characteristics and is easy to mount, making it suitable for use in various applications that require fast switching and low power consumption.

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