SIRA60DP-T1-GE3 Discrete Semiconductor Products

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The SIRA60DP-T1-GE3 is a single N-channel, enhancement mode field effect transistor (FET) manufactured by Infineon. It is primarily used in industrial, consumer and computing applications due to its high power efficiency and low on-resistance. This makes it suitable for applications that require high switching speed and low power consumption, such as in power supplies, converters and motor control circuits.

In a basic FET, a positive gate voltage will cause an electric field. This electric field will cause the depletion of charge carriers at the junction between the source and the drain. This reduces the on-resistance across the channel, allowing the current to flow. With the SIRA60DP-T1-GE3, this process is further boosted due to its enhancement mode design, by more aggressively increasing the on-resistance upon increasing the applied voltage. As such, the SIRA60DP-T1-GE3 exhibits superior speed and power efficiency for high switching currents up to 60A and drain source voltages up to 60V.

The SIRA60DP-T1-GE3 is available in an industry standard 3-pin FET package, making it an ideal choice for tight-space applications. It has an operating temperature range from -55 °C to 150 °C, making it well suited for harsh operating conditions. It also features reverse avalanche and ESD protection, as well as thermal and gate current protection. Furthermore, it is RoHS compliant, meaning it is more environmentally friendly than products that do not comply with RoHS.

In summary, the SIRA60DP-T1-GE3 is a single N-channel, enhancement mode FET that is ideal for industrial, consumer and computing applications requiring high switching speed and low power consumption. With superior performance, low power consumption, excellent reliability and a RoHS compliant design, it is the perfect choice for applications requiring high power efficiency and low on-resistance.

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