SIRA10DP-T1-GE3

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Ta), 40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2425pF @ 15V
Vgs (Max):	+20V, -16V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	3.7 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to the SIRA10DP-T1-GE3

The SIRA10DP-T1-GE3 is a single Field Effect Transistor (FET) that is can be expected to find applications in a variety of electronic devices. As with any electronic component, it is important to have a clear understanding of its elements and its properties to effectively use it in a certain application. This article will discuss the application field and working principle of the SIRA10DP-T1-GE3.

A Closer Look at the SIRA10DP-T1-GE3

The SIRA10DP-T1-GE3 is a single field effect transistor that is popularly used in various applications. This type of transistor contains a number of different elements that work together to create the desired effect. Firstly, the source and drain electrodes are composed of two separate layers of metal. This is intended to create a voltage gradient between the two sources and allows the drain to be positively or negatively charged depending on the situation. The gate electrode is then driven between these two terminals to allow the transistor to switch between conducting and non-conducting states.

Operational Characteristics of the SIRA10DP-T1-GE3

The SIRA10DP-T1-GE3 is a N-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is used as a switch which can be activated either by a low voltage or by an electric field. When activated, the transistor then allows current to flow from the source to the drain. The SIRA10DP-T1-GE3 can also be used as a voltage multiplier and can be used to store and release energy.

Applications of the SIRA10DP-T1-GE3

The SIRA10DP-T1-GE3 can be used in a wide range of applications. Firstly, it can be used as a switch in a variety of digital logic circuits. Secondly, it can be used as an amplifier, allowing small signals to be amplified and boosted to a higher level. Thirdly, it can be used in power switching and as a voltage multiplier. Finally, the SIRA10DP-T1-GE3 can also be used as an integrator, allowing for the conversion of analog signals into digital signals.

Conclusion

The SIRA10DP-T1-GE3 is a single field effect transistor which is popularly used in a wide range of applications. Its ability to switch between conducting and non-conducting states makes it a valuable device in digital logic circuits, power switching, voltage multiplication, and signal integration. By understanding the operational characteristics and the application field of the SIRA10DP-T1-GE3, users are able to effectively make use of this device in various projects.

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