Allicdata Part #: | SIRA18DP-T1-RE3-ND |
Manufacturer Part#: |
SIRA18DP-T1-RE3 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 33A POWERPAKSO-8 |
More Detail: | N-Channel 30V 33A (Tc) 14.7W (Tc) Surface Mount Po... |
DataSheet: | SIRA18DP-T1-RE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.13139 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 14.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 15V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIRA18DP-T1-RE3 transistor is a single-transistor device designed for high-frequency applications. It has two gates and a drain, and is a depletion-mode MOSFET with an on-state resistance of 10 ohms. It is typically used in audio, video, and computer applications where it is needed to switch power at high frequencies.
The working principle of the SIRA18DP-T1-RE3 involves the creation of an electric field between the gates and the drain. When the gate receives a positive voltage, the electric field causes electrons to flow from the drain to the gate, which causes current to flow through the transistor. Conversely, when the gate voltage is removed, the drain-gate electric field is eliminated and the transistor turns off, stopping the flow of current.
The attractiveness of the SIRA18DP-T1-RE3 resides in its ability to precisely control current flow due to its low on-state resistance. This low resistance gives the SIRA18DP-T1-RE3 excellent performance in high-speed applications, such as power supplies and frequency converters. In radio-frequency applications, the SIRA18DP-T1-RE3 is an ideal choice due to its low noise and high switching frequency capability.
The SIRA18DP-T1-RE3 is typically used in a variety of applications including low-power switching, motor speed control, and digital logic. In the audio and video industries, the SIRA18DP-T1-RE3 is often used in high-frequency amplifiers and switching circuits. In computers, the SIRA18DP-T1-RE3 is useful in digital logic circuits, such as field-programmable gate arrays (FPGAs).
Given its low on-state resistance, the SIRA18DP-T1-RE3 is capable of switching high frequencies with high accuracy. It is also capable of handling large currents, making it an ideal choice for applications such as high-power switching and motor control. Furthermore, because it is a depletion-mode MOSFET, the SIRA18DP-T1-RE3 consumes less power than its enhancement-mode counterpart and can operate over a wide range of supply voltages with its high input impedance.
Overall, the SIRA18DP-T1-RE3 is a versatile transistor that is capable of operating at high frequencies with excellent accuracy and power efficiency. It is suitable for various applications, including audio/video switching, motor speed control, digital logic, and power supplies. As a result, the SIRA18DP-T1-RE3 has become an important component of many modern electronic systems.
The specific data is subject to PDF, and the above content is for reference
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