SIRA00DP-T1-GE3

The SIRA00DP-T1-GE3 is a gallium nitride (GaN) enhancement-mode (E-mode) power field-effect transistor (FET) manufactured by Infineon Technologies. It is typically used for switching converters in applications with high input voltages such as multi-kilowatt offline high-frequency applications. The device has low noise performance and delivers better than 5% ripple performance, making it ideal for applications such as high-power ac-dc converters that require high efficiency, low switching turn-on losses, and maximum power density.

The device is available in a package with a footprint of 8x8mm. It has integrated tens of drivers, which help reduce component count and save board space. It features a single gate-source voltage of 20V and a maximum drain current of 100A. It includes a temperature management feature that allows the user to monitor the temperature of the component and increase its reliability by switching it off when it reaches an unsafe temperature level.

The SIRA00DP-T1-GE3 works by allowing or blocking a current flow through its gate-source terminal depending on the voltage applied to it. When the voltage applied is below a threshold voltage, the device is in its off-state, blocking the current. When the voltage applied is greater than the threshold voltage, the device is in its on-state, allowing current to flow. The device acts as a switch, and the user is able to control the voltage applied to it in order to control the switch and, therefore, the current flow.

The device also has a drain-source resistor for overcurrent protection. This circuit limits the current through the device and helps to protect it from any potential damage due to overcurrent conditions. If the current through the device exceeds the set current limit, the device will be switched off automatically. This prevents the device from being damaged or destroyed due to extreme current flows.

The SIRA00DP-T1-GE3 is an ideal solution for high power offline switching applications. Its high breakdown voltage, low noise performance and wide temperature range make it suitable for applications with high input voltages. Its integrated tens of drivers and temperature management feature make it a great solution for designers looking for maximum power density, high efficiency, and low switching turn-on losses.