SIRA32DP-T1-RE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIRA32DP-T1-RE3TR-ND |
Manufacturer Part#: |
SIRA32DP-T1-RE3 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 25V 60A POWERPAKSO-8 |
More Detail: | N-Channel 25V 60A (Tc) 65.7W (Tc) Surface Mount Po... |
DataSheet: | SIRA32DP-T1-RE3 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.31089 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 65.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4450pF @ 10V |
Vgs (Max): | +16V, -12V |
Gate Charge (Qg) (Max) @ Vgs: | 83nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIRA32DP-T1-RE3 is a single N-Channel Enhancement-Mode Field-Effect Transistor (N-MOSFET). This device is made of silicon and is often used in a variety of applications due to its unique properties. It has a drain-to-source on-resistance of 32 Ohms when operated with a gate-to-source voltage of 10V. The SIRA32DP-T1-RE3 is ideal for applications requiring low voltage operation (<10V) and low on-resistance (<50 Ohms).
N-Channel Enhancement-Mode Field-Effect Transistors (N-MOSFETs) are four-terminal devices that are composed of source, drain, gate, and body terminals. The transistor functions by controlling the flow of electrons from the source terminal to the drain terminal by manipulating the voltage applied at the gate terminal. When a positive voltage is applied to the gate terminal, the N-MOSFET is switched “on”, allowing electrons to flow through the device. When a negative voltage is applied to the gate terminal, the N-MOSFET is switched “off”, inhibiting the flow of electrons.
The SIRA32DP-T1-RE3 offers several advantages when compared to traditional power switching technologies. Specifically, MOSFETs are excellent switches with minimal power losses, giving them the ability to provide efficient power switching for various applications. Additionally, due to their inherently low on-resistance, the SIRA32DP-T1-RE3 can switch high currents without significant power loss or heating, making them suitable for power applications. Finally, their small size and low cost make them attractive for many applications.
The SIRA32DP-T1-RE3 can be used in a wide range of applications, including motor control, switching power supplies, and DC-DC converters. Additionally, it can be used in audio circuits as a voltage-controlled amplifier, as a voltage-controlled resistor, or as part of an audio compressor. The SIRA32DP-T1-RE3 is also an ideal device for use in robotics, as it can be used to control the movements of a robotic arm or leg. Additionally, due to its low on-resistance, the SIRA32DP-T1-RE3 can be used as a switch in electronic circuits, allowing the user to control the flow of current in the circuit.
In conclusion, the SIRA32DP-T1-RE3 is a single N-Channel Enhancement-Mode Field-Effect Transistor (N-MOSFET) that offers superior performance in a variety of applications. Its low on-resistance makes it ideal for applications requiring low voltage (<10V) and low on-resistance (<50 Ohms) operations. Additionally, the SIRA32DP-T1-RE3 is a cost-effective alternative to traditional power switching technologies due to its small size, low power losses, and low cost. The SIRA32DP-T1-RE3 can be used in applications such as motor control, switching power supplies, DC-DC converters, audio control circuits, and robotics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SIRA88DP-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 30V 45.5A POW... |
SIRA20DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 25V POWERPA... |
SIRA12BDP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30VN-Channe... |
SIRA10BDP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30VN-Channe... |
SIRA58ADP-T1-RE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET N-CH 40VN-Channel ... |
SIRA01DP-T1-GE3 | Vishay Silic... | 0.41 $ | 1000 | MOSFET P-CH 30V POWERPAK ... |
SIRA54DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 60A POWER... |
SIRA62DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30VN-Channe... |
SIRA52ADP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 40V PPAK SO... |
SIRA22DP-T1-RE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 25V 60A POWER... |
SIRA02DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A PPAK ... |
SIRA34DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIRA36DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIRA00DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 100A PPAK... |
SIRA60DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 100A POWE... |
SIRA50ADP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 40V PPAK SO... |
SIRA52DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 60A PPAK ... |
SIRA18ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 30.6A POW... |
SIRA96DP-T1-GE3 | Vishay Silic... | 0.14 $ | 6000 | MOSFET N-CH 30V 16A POWER... |
SIRA84DP-T1-GE3 | Vishay Silic... | 0.15 $ | 3000 | MOSFET N-CH 30V 60A POWER... |
SIRA12DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 25A PPAK ... |
SIRA10DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 60A PPAK ... |
SIRA14DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 58A PPAK ... |
SIRA16DP-T1-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 30V D-S PPAK ... |
SIRA26DP-T1-RE3 | Vishay Silic... | 0.22 $ | 3000 | MOSFET N-CH 25V 60A POWER... |
SIRA24DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 25V 60A POWER... |
SIRA32DP-T1-RE3 | Vishay Silic... | 0.34 $ | 3000 | MOSFET N-CH 25V 60A POWER... |
SIRA72DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 60A POWER... |
SIRA64DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A POWER... |
SIRA64DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A POWER... |
SIRA66DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A POWER... |
SIRA04DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIRA06DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIRA58DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 60A PPAK ... |
SIRA90DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 100A POWE... |
SIRA90DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 100A POWE... |
SIRA80DP-T1-RE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30V POWERPA... |
SIRA50DP-T1-RE3 | Vishay Silic... | 0.56 $ | 1000 | MOSFET N-CH 40V PWRPAK SO... |
SIRA18DP-T1-RE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET N-CH 30V 33A POWER... |
SIRA18DP-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 30V 33A PPAK ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
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