SIRA50DP-T1-RE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SIRA50DP-T1-RE3TR-ND |
| Manufacturer Part#: |
SIRA50DP-T1-RE3 |
| Price: | $ 0.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V PWRPAK SO-8 |
| More Detail: | N-Channel 40V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 10... |
| DataSheet: |  SIRA50DP-T1-RE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.50860 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 6.25W (Ta), 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8445pF @ 20V |
| Vgs (Max): | +20V, -16V |
| Gate Charge (Qg) (Max) @ Vgs: | 194nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 1 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 62.5A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Digi-Reel® |
Description
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The SIRA50DP-T1-RE3 is a type of transistor known as Field Effect Transistor (FET) designed specifically for single applications. It is also referred to as a MOSFET single. This device is commonly used for controlling voltage and current in applications where a wide bandwidth is required such as controlling low-voltage DC and high-frequency applications. In addition, due to its wide bandwidth and low power consumption, the SIRA50DP-T1-RE3 is often used for radios, telecommunications, and other types of industrial applications. To understand the working principle of the SIRA50DP-T1-RE3, it is helpful to have some basic knowledge of a transistor’s operation. A transistor is a semiconductor device that can be used to either increase or decrease current through a circuit. In the case of a MOSFET single, a gate voltage controls the transistor’s current flow. A voltage applied to the gate reversibly changes the resistance of the source-drain channel. When there is a positive voltage on the gate, the device will be in a conducting state, meaning current will flow from the source to the drain. When the gate voltage is reversed, the device will enter a non-conducting state, and current will not be allowed to pass from the source to the drain. The SIRA50DP-T1-RE3 contains several features that make it an ideal device for single applications. For instance, it has a very low gate-source capacitance and resistance, meaning that it can switch quickly with minimal power consumption. In addition, it has an extremely low on-resistance, allowing for superior performance in applications where power dissipation needs to be minimized. Additionally, it has an extremely high breakdown voltage and can withstand higher gate-source voltages, making it suitable for applications that require precise voltage control.The SIRA50DP-T1-RE3 also has a wide array of applications. Due to its low power consumption, this transistor is especially well-suited for use in mobile applications such as smartphones, tablets, and laptops. Its high breakdown voltage and gate-source capacitance make it ideal for use in power supplies, switching power amplifiers, power converters, and pulse width modulators. Additionally, it can be used in RF communication applications, such as Bluetooth and Wi-Fi, where it can be used to effectively control high-frequency signals. In summary, the SIRA50DP-T1-RE3 is an ideal choice for single applications due to its low gate-source capacitance, low on-resistance, high breakdown voltage, and low power consumption. Its wide array of applications, which include mobile devices, power supplies, and RF communications, makes it an attractive option for many types of industrial applications.
The specific data is subject to PDF, and the above content is for reference
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