SIRA64DP-T1-RE3

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The SIRA64DP-T1-RE3 is a P-Channel Enhancement-Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed specifically to provide excellent switching performance in a range of different applications. It is a dual-gate, low-power device that offers increased switching frequency, low gate charge, low threshold voltage and good thermal stability. This makes it ideal for applications such as AC/DC, DC/AC and DC/DC converters, as well as power sources for high-power applications.

The SIRA64DP-T1-RE3 is a P-channel MOSFET, meaning that it is constructed of a P-type semiconductor material, or substrate. This material is heavily doped with impurities, typically phosphorus, in order to create a positive channel between the source and the drain. The channel is then able to conduct when an appropriate voltage is applied to the gate. This makes the device ideal for switching applications, as the channel can be opened and closed at will.

The SIRA64DP-T1-RE3 has an Environmental protection rating of IP3K3, which means it is suitable for high-temperature and hostile environments. It comes with a maximum junction temperature of 105°C and is able to operate over a wide temperature range of -55°C to 150°C. The device is also able to withstand large amounts of transient current - up to 1.2 A for 20 μs at an ambient temperature of 25°C. This makes it suitable for high power and high frequency switching applications.

The SIRA64DP-T1-RE3 has a wide range of electrical parameters which make it suitable for a number of different applications. It has a gate threshold voltage (VGS) of 4V, drain current (ID) of 64A and drain to source breakdown voltage (VDSS) of 20V, among other parameters. It also has low on-state resistance (RDS(on)) and excellent device control due to its dual gate structure. This makes it suitable for a range of switching applications.

The SIRA64DP-T1-RE3 has low gate charge (QG), which allows the device to switch relatively quickly. This makes it ideal for applications such as AC/DC and DC/AC converters. It also has a low gate threshold voltage (VGS) of 4 V,which ensures that it can easily be driven using low-power logic circuits. Finally, it has excellent thermal stability, which ensures that it can safely operate at high temperatures without experiencing a failure.

In summary, the SIRA64DP-T1-RE3 is a dual-gate, low-power P-channel MOSFET that is ideal for switching applications. It has a wide range of electrical parameters which make it suitable for a variety of applications, including AC/DC and DC/AC converters. It also has a low gate charge, low gate threshold voltage and excellent thermal stability, making it an ideal choice for high-power and high-frequency switching applications.

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