SIRA16DP-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIRA16DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIRA16DP-T1-GE3 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V D-S PPAK SO-8 |
More Detail: | N-Channel 30V 16A (Ta) Surface Mount PowerPAK® SO... |
DataSheet: | SIRA16DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.16999 |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Base Part Number: | SIRA16 |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2060pF @ 15V |
Vgs (Max): | +20V, -16V |
Series: | TrenchFET® |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIRA16DP-T1-GE3 is a single-channel, non-polar, depletion-mode, vertical DMOS field effect transistor (DMOS FET) designed and manufactured by Vishay Intertechnology.
The SIRA16DP-T1-GE3 is designed for use in applications such as television, CCTV, telephony, automotive, and industrial electronics. It is used in a variety of applications such as amplifiers, motor control, switching and solid-state relays, and voltage regulator circuits.
The SIRA16DP-T1-GE3 is a depletion-mode FET, meaning that it will turn on when the voltage at its gate is approximately zero volts. It has a break-down voltage of 30V, breakdown current of and a maximum drain current of 20mA. It is rated at a maximum voltage of 16V and can handle up to 2A. It has a drain-gate capacitance of 7pF and a gate-drain capacitance of 2.5pF.
The device has an on-resistance of 1.5ohm and an off-resistance of 47kohm. It has a maximum drain-gate voltage of -7V. It has a minimum operating temperature of -55°C and a maximum operating temperature of +175°C.
This device is available in the SOT-23 package and comes with a variety of features such as high noise immunity, improved diode performance, enhanced reliability, low power consumption, and low-cost manufacturing. It is also RoHS compliant and has no latching or holding current.
The SIRA16DP-T1-GE3 is used as an on-off switch in many applications. When the gate voltage is low (or zero), the DMOS FET is off and the output is pulled low. When the gate voltage is high, the transistor is on, and the output is pulled high. This allows the device to be used in voltage regulator circuits, as well as motor control, switching and solid-state relays.
The SIRA16DP-T1-GE3 is also used in amplifiers, as it can provide a low on-resistance, low gate capacitance and fast switching time, making it an ideal choice for high-frequency amplifiers. The device can also be used in voltage regulator circuits for switching and providing clean power to a variety of electronic devices.
The SIRA16DP-T1-GE3 is an ideal choice for applications where low power consumption, low-cost manufacturing and high noise immunity are required. It can be used in a variety of circuits, from simple on-off switches to high-frequency amplifiers, voltage regulator circuits and motor control devices. It is a reliable and cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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