SIRA58DP-T1-GE3

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Introduction

The SIRA58DP-T1-GE3 is a single-gate Metal Oxide Silicon Field Effect Transistor (MOSFET). This type of transistor is used for switching applications due to their fast switching speeds in comparison to other transistors. MOSFETs are widely used in digital, analog and telecommunication applications due to their unique electrical characteristics, ability to be operated with low bias currents and distinguished feature which enables the device to remain in the cut-off region even when the gate voltage is increased.

Applications

This type of transistor is suitable for use in a variety of applications, such as digital logic gate functions, switching power amplifiers, power control circuits, switching networks and circuit protection. The SIRA58DP-T1-GE3 can be used in power supplies, motor control, sensor control and switching applications. It can also be used in dc-dc converters, forward converters and half-bridge topology. Additionally, this vector transistor is suitable for industrial automation and aerospace applications.

Working Principle

MOSFETs operate on the principle of "Field Effect Transistor". They consist of a source, drain and gate, with the gate controlling the movement of electrons between the source and drain. At low drain-to-source voltage (Vds) values, the electrons will be repelled by the gate, leading to a lower current flow between the source and drain. At high Vds values, the electrons will be attracted to the gate, leading to a higher current flow. The current flow is therefore controlled by the voltage applied to the gate.

The SIRA58DP-T1-GE3 has a maximum drain-source voltage of 0.5V and a maximum drain current of 8A. The input capacitance of this device is 70 to 160pF. It has an on-resistance of 69m? and an off-resistance of 118m?. The breakdown voltage of this device is 25V and the power dissipation is 1.86W.

The SIRA58DP-T1-GE3 also has a maximum operating temperature rating of 125?C and can handle transient voltages up to 15V. It is constructed using silicon technology and is RoHS compliant.

Conclusion

The SIRA58DP-T1-GE3 is a versatile and reliable single-gate Metal Oxide Silicon Field Effect Transistor (MOSFET) which is suitable for applications such as switching power amplifiers, power control circuits, switch networks, circuit protection and digital logic gate functions. This vector transistor features a maximum drain-source voltage of 0.5V, a maximum drain current of 8A, an input capacitance of 70 to 160pF and a breakdown voltage of 25V. Furthermore, the SIRA58DP-T1-GE3 has a maximum operating temperature rating of 125?C and can handle transient voltages up to 15V.

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